Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"Metal-organic vapour phase epitaxy"”.
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Organotellurium compounds for metal organic vapour phase epitaxy
… telluride can be grown by the technique of Metal Organic Vapour Phase Epitaxy using simple alkyl telluride compounds as the source of tellurium. New tellurium precursors are required in order to overcome handling and toxicity problems and to reduce the growth temperature in preparing the …
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Structural Characterisation of Heteroepitaxial Zincblende Gallium Nitride
… this thesis, metastable zincblende GaN grown by metal-organic vapour phase epitaxy is stabilised on 3C-SiC/Si substrates with a miscut, ranging from 0° to 4°. Crystalline zincblende GaN nucleates as elongated islands which coalesce with increasing GaN deposition. Annealing of nucleation layers …
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Compound Semiconductor Material Manufacture, Process Improvement
… semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are relative to discrete or multi-compound use of Gallium Arsenide or Indium Phosphide [III/V]. For MOVPE to compete in large-scale markets, the …
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Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).
… of the needed semiconductor structures grown by metal-organic vapour phase epitaxy (MOVPE), and of the final concentrator solar cell devices. A special emphasis is put on the optimization of the solar cell concentration response, as the most important distinctive characteristic when compared to …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in …
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Tomographic reconstruction and sub-surface imaging of porous nitride semiconductors
… These photonic structures are fabricated through metal-organic vapour phase epitaxy and a conductivity-selective electrochemical etching process — defect-mediated via nanoscale pipes formed at etched threading dislocations intrinsic to the heteroepitaxial growth process. A non-invasive, …
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MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths
… to the graded layers. However, when grown by metal-organic vapour phase epitaxy (MOVPE), it has been shown as extremely challenging to achieve ∼ 1.3µm emission in InGaAs metamorphic quantum well (QW) lasers (on GaAs substrate), due to a variety of strong, growth related issues, fundamentally …