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Showing 1 to 20 of 35 for “"Metal-organic chemical vapor deposition (MOCVD)"”.
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Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD)
… with epitaxial relationship using traditional vapor deposition techniques such as metal-organic chemical vapor deposition (MOCVD). Therefore, the novelty of non-planar morphology can be achieved using industrial scale high throughput deposition techniques. To realize the full potential of …
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Chemical vapor deposition of copper, copper(I) oxide, and silver from metal-organic precursors
Metal-organic chemical vapor deposition (MOCVD) from the tetrameric precursor copper(I) tert-butoxide, (Cu(O-t-Bu)) $\sb4$, results in the deposition of pure copper(I) oxide whiskers at 510 K and of copper metal with $\sim$2% oxygen contamination at 670 K. Quantitative analyses of the gaseous …
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System-Technology Co-Optimization of Scaled Electronics Based on Two-Dimensional Materials
… includes inventing a low-temperature (< 300 °C) metal-organic chemical vapor deposition (MOCVD) method for 2D materials on 8-inch wafers, investigating extreme device scaling and multi-channel transistors. Design-Technology Co-Optimization (DTCO) and SystemTechnology Co-Optimization (STCO) are …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… strain engineering, and complementary metal-oxide-semiconductor (CMOS) compatible gold-free process, were developed to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in …
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Nanoscale Selective Area Epitaxy for Optoelectronic Devices
… by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum …
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High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis
… will demonstrate a novel 8-inch, BEOL-compatible metal organic chemical vapor deposition (MOCVD) method for the synthesis of 2D transition metal dichalcogenide materials with growth temperature lower than 400°C. Highly-scaled high-performance MoS₂ transistors will also be investigated with …
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Investigation of wide bandgap semiconductors for room temperature spintronic, and photovoltaic applications
… is investigated.</p> <p>Spin properties of metal-organic chemical vapor deposition (MOCVD) – grown gadolinium-doped gallium nitride (GaGdN) are studied and underlying mechanism is identified. GaGdN exhibits Anomalous Hall Effect at room temperature if it contains oxygen or carbon atoms but …
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Microstructural Evolution in Mocvd-Derived Tantalum-Doped Tin Dioxide Thin Films and Subsequent Property Changes
… glass and A12O3(0001) substrates utilizing the metal-organic chemical vapor deposition (MOCVD) technique. The main focus of this study was to understand the structure-property relationship in the Ta-Sn-O material system. Microstructure of the films was characterized through x-ray diffraction …
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Analysis of materials properties of thin film structures for thermoelectric and thermophotovoltaic applications
Metal-organic chemical vapor deposition (MOCVD) was used to grow InAsP graded layers and AlAs/GaAs superlattices for materials studies related to thermophotovoltaics and thermoelectrics respectively. High resolution x-ray diffraction (HRXRD) was used to determine the As concentration in each of the …
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
… on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of …
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First Demonstration of beta-phase Gallium Oxide Optical Waveguide in Visible-UV Spectrum
… waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). Their propagation losses in the visible spectrum were comprehensively studied via experiments and simulations of the finite difference method by varying the dimensions of the waveguides. The …
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Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… in-plane lattice constant to graphene and chemical inertness and resistance to oxidation makes hBN an ideal material for the exploration of Van der Waals heterostructures made layer by layer between hBN/graphene related materials with new physics and applications. This thesis work focuses …
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Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices
In this project, we implement modern metal organic chemical vapor deposition (MOCVD) technology to fabricate monolithic platforms which integrate traditionally incompatible materials with the ultimate goal of achieving high brightness green to amber light emitting diodes (LEDs) and laser diodes …
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Multiferroic BiFeO3 films and nanostructures for hybrid energy harvesters
… the following work has been focused on the deposition by metal-organic vapor phase deposition of multiferroic BiFeO3 films and nanostructures. BiFeO3 is a multiferroic material and can maintain its properties in extreme environments thanks to its Curie and Neel temperatures well above room …
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The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS
… interfaces of GaN and InGaN grown by sputter deposition and GaN grown by metal-organic chemical vapor deposition (MOCVD) with CdTe and CdS. First, the GaN and InGaN films were characterized by AFM and XRD, and it has been shown that the MOCVD samples have a very smooth surface and are single …
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Gallium Nitride-Based HEMTs for Microwave Power and Noise: Physics and Application
… of 0.25 mum x 100 mum AlGaN/GaN HEMTs grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates is reported. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% …
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Synthesis and characterization of two-dimensional transition metal dichalcogenides
Semiconducting transition metal dichalcogenides (TMDCs) have attracted intense research interest in recent years, due to their many unique electrical, optical, and mechanical properties and their potential for diverse applications. One of the key challenges in 2D TMDC electronics is to synthesize …
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Fabrication and Optimization of Single-Junction GaAs Thin Film Solar Cells on Epi-ready Flexible Metal Tapes for Low-cost Photovoltaics
… thin films on low-cost flexible epi-ready metal tapes that can replace the expensive wafers. The template layers on the epi-ready metal tapes are grown via a roll-to-roll process using Ion Beam Assisted Deposition (IBAD). Metal organic chemical vapor deposition (MOCVD) is used to …
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Photoanode and counter electrode modification for more efficient dye sensitized solar cells
… treatment and thermal oxidation of sputtered Ti metal films, were employed and systematically studied in order to minimize electron-hole recombination and electron backflow during photovoltaic processes of DSSCs. TiCl[subscript]4 solution treatment method was found to create a porous …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… Samples grown by Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) typically show a high surface band bending of about 1 eV. In an n-type sample with 3X1017 cm-3 carrier concentration, 1 eV upward band bending corresponds to …
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