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Showing 1 to 8 of 8 for “"Metal-Semiconductor-Metal Photodetectors"”.
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Surface plasmons for enhanced metal-semiconductor-metal photodetectors
… a photon couples to the free electron gas of the metal at the interface between a metal and a dielectric. The extraordinary properties of SPP allow for sub-diffraction limit waveguiding and localized field enhancement. The emerging field of surface plasmonics has applied SPP coupling to a number …
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Metal-semiconductor-metal photodetectors for optoelectric receiver applications
Restriction data tranferred 2014-07-01T11:20:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission
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High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications
A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\mu$m, to be …
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Optical Enhancement in Periodic Plasmonic Gratings for SERS and Metal-Semiconductor-Metal Photodetectors (MSM-PDs) Applications
… grating electrodes on the efficiency of metal-semiconductor-metal photodetectors (MSM PDs) and the sensitivity of Surface Enhanced Raman Spectroscopy (SERS). This research can benefit many areas of nanoscience and optics, including plasmonic applications, such as, super lenses, nano-scale …
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Development of photochemical etching and its application in fabrication of integrated reflector metal semiconductor metal photodetectors
… step. It is based on light-assisted etching of semiconductors placed in a suitable chemical solution. By projecting spatially varying intensity light, grayscale etching can be achieved. The thesis begins with the motivation and literature review of this area of study, and then discusses the …
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Charakterisierung und Optimierung von (Al, Ga)N-basierten UV-Photodetektoren
… on the electro-optic properties of AlGaN-based metal-semiconductor-metal photodetectors (MSM PD) was investigated. The focus was on the realization of Schottky-type MSM PD suitable for photodetection below wavelengths of 300 nm with a high external quantum efficiency (EQE). First, experimental …
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Contribución al desarrollo y caracterización de fotodetectores avanzados basados en nitruros del grupo III
… ha podido comprobar que el silicio, el material semiconductor más extendido en la actualidad, sufre una severa degradación de sus características en alta temperatura, debido a su gap relativamente estrecho. Los nitruros, sin embargo, al ser materiales de gap ancho, tienen mejores características …