Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 47 for “"Metal-Oxide-Semiconductor Field-Effect Transistors"”.
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Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
… tunnelling currents in contemporary silicon dioxide (SiO2) based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high dielectric constants (high-κ) are being studied as …
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Large-area CVD growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors
… of single-layer CVD-grown MoS₂ and WS₂ field-effect transistors with a back-gated configuration are demonstrated.
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Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs
As complementary metal-oxide-semiconductor field-effect transistors (MOSFETs) scale, strained Si and SiGe technology have received more attention as a means of enhancing performance via improved carrier mobility. One of the biggest challenges for strained Si and SiGe technology is Si-Ge …
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High-resolution transmission electron microscopy of III-V FinFETs
… for integration into future complementary metal-oxide-semiconductor technology due to their outstanding electron transport properties. InGaAs n-channel metal-oxide-semiconductor field-effect transistors have already demonstrated promising characteristics, and the antimonide material system …
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Simulation and fabrication of GaN-based vertical and lateral normally-off power transistors
… GaN-based vertical and lateral power transistors and were validated with experimental DC characteristics. The models were used to study the thermal performance of GaN-based vertical metal oxide semiconductor field-effect transistors (MOSFETs) and the lateral high electron mobility …
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Current-Transformer Based Gate-Drive Power Supply With Reinforced Isolation
… are at the heart of high-power converters. SiC metal-oxide semiconductor field-effect transistors (MOSFETs) have advantages over silicon (Si) devices due to their higher breakdown voltage, higher thermal capability, and lower on-state resistance. However, their fast switching frequency and high …
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High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization
… integration of high speed heterostructure field-effect transistors and III-V-based optoelectronics onto silicon substrates. In this thesis, dislocation dynamics in compositionally graded SiGe layers are explored and mobility enhancements in strained Si/SiGe metal-oxide-semiconductor …
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Reducing Subthreshold Leakage Power Through Hybrid MOSFET-NEMS Power Gating
… when idle, reduces static power consumption. The Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) currently employed in processors leak current. Even in power gated circuits, MOSFET power gating may only save between 60-80% of power. A different type of switch, a Nanoelectromechanical …
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Thermally Aware Design Approaches for High Power Density Ultra-Wide Bandgap Power Electronics
Ultra-wide bandgap (UWBG) semiconductors like β-type gallium oxide (β-Ga2O3) show promise for the development of next-generation high power density electronics devices such as RF and power electronics. The large bandgap (4.8 eV), high breakdown fields (8 MV/cm), and excellent thermal stability of …
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FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY
… Temperature Instability (NBTI) in silicon based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been recognized as a critical reliability issue for advanced space qualified electronics. The phenomenon manifests itself as a modification of threshold voltage (Vth) resulting in …
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Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors
… lower limit of subthreshold slope (SS) within metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage without degrading ON/OFF-ratio in today's integrated circuits. Tunnel field-effect transistors (TFETs) benefit from steep …
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PCB-Based 1.2 kV SiC MOSFET Packages for High Power Density Electric Vehicle On-Board Chargers
… the incumbent silicon insulated gate bipolar transistors with silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) has been proposed as a solution to increase the power densities of power converters in some applications. One such application is electric vehicles …
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Atomic -Scale Statistical Models of Semiconductor Device *Reliability
… induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen (deuterium) bond dissociation by electronic excitation for both the interface and scanning …
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Atomic Scale Statistical Models of Semiconductor Device Degradation
… induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen(deuterium) bond dissociation by electronic excitation for both the interface and scanning …
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Band Engineering of Advanced Materials for Semiconductor Devices
As the downscaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) continues, the short-channel effects (SCEs) and contact resistance severely degrade device performance. It is crucial to understand the physics at various interfacial regions of MOSFETs to provide guidance for …
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Design and Implementation of a Multiphase Buck Converter for Front End 48V-12V Intermediate Bus Converters
… bus converters (IBCs) use silicon power metal oxide semiconductor field effect transistors (MOSFETs), which recently have reached the limit in terms of turn on resistance (RDSON) and switching frequency. In order to make the IBCs smaller, the switching frequency needs to be pushed higher, …
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… feature size in silicon (Si)-based complimentary metal-oxide-semiconductor (CMOS) technology has resulted in an exponential increase in computing power. Stemming from increases in device density and substantial progress in materials science and transistor design, the integrated circuit has seen …
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Flexible Mems: A Novel Technology To Fabricate Flexible Sensors And Electronics
… <p> MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components …
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Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques
… switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored to predict when and how they might fail. A huge fraction of research efforts involves the study of power electronic device reliability and …
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Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications
The International Technology Roadmap for Semiconductors outlines the need for high-K dielectric based gate-oxide Metal Oxide Semiconductor Field Effect Transistors for sub-45 nm technology nodes. Gate oxides of hafnium seem to be the nearest and best alternative for silicon dioxide, when material, …
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