Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"Metal-Oxide-Semiconductor Devices"”.
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Initial oxidation of zirconium : chemistry, atomic structure, transport and growth kinetics
… states and atomic structure of the initial oxide on zirconium and the oxygen transport kinetics through this oxide under electric field. This goal is important for enabling more accurate zirconium oxidation models, for example for nuclear reactor materials, as well as for assessing the …
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The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric
… the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the …
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Ge photodetectors for Si microphotonics
… on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1.
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Spin-orbit torque switching of compensated ferrimagnetic cobalt-terbium alloys
Spintronic devices promise to be an energy efficient alternative to complementary metal oxide semiconductor devices for logic and memory. However, in order to be more competitive, further reductions in switching energy and switching speed are needed. Recently, there has been interest in using …
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Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon
… dangling bond, which degrades performance of MOS devices. Passivation of these bonds with hydrogen had been found to diminish their effect but the improvement degrades the operation due to hot electron effect. Passivation with deuterium annealing has proven to improve the lifetime of the metal …
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Heteroepitaxial Germanium-on-Silicon Thin-Films for Electronic and Photovoltaic Applications
… for solar power. In this pursuit, III-V compound semiconductor based solar cells have steadily shown performance improvement at approximately 1% (absolute) increase per year, with a recent record efficiency of 46% under concentrator and 32% under AM0. However, the expensive cost has made it …
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Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications
… scaling of silicon (Si) based complementary metal-oxide-semiconductor (CMOS) transistors has resulted in an exponential increase in device density, and thus an exponential increase in computing power. Increasing transistor density also results in increasing total power consumption and thus, …