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Showing 1 to 20 of 305 for “"Metal-Oxide-Semiconductor"”.
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Radiation effects in metal-oxide-semiconductor capacitors
… high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… Apart from being a direct and wide band-gap semiconductor which can be useful for optoelectronic devices, GaN and its alloys have other material attributes like spontaneous and piezoelectric polarization, high electron mobility, and high saturation velocity for electrons. These properties …
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Theoretical and Experimental Investigations of Metal-Oxide-Semiconductor Transistors
Submitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-18T20:53:47Z No. of bitstreams: 1 1966_Pao.pdf: 4882994 bytes, checksum: 6a7e3b172550a983b72cf4daac2ce1f9 (MD5)
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Theory and Experiments on High Frequency Metal-Oxide Semiconductor Capacitance
Made available in DSpace on 2014-12-10T19:07:24Z (GMT). No. of bitstreams: 1 7511694.pdf: 2793812 bytes, checksum: d010dd143e090dd1232ca8c34f1492b0 (MD5) Previous issue date: 1974
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Thin Oxide Metal-Oxide - Semiconductor Capacitor Studies of Fast Surface States
Made available in DSpace on 2015-05-12T22:38:46Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7212221.PDF: 2511309 bytes, checksum: d384075a57e8f67cba6284709e4a102b (MD5) Previous issue date: 1971
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Design automation for high performance complementary metal oxide-semiconductor VLSI circuits
… circuit and layout issues of the Complementary Metal-Oxide-Semiconductor (CMOS) Very Large Scale Integrated (VLSI) circuit design. Dynamic CMOS circuits are implemented judiciously to increase the packing density and lower the power consumption. A design automation system, iCOACH, which …
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Split gate tunnel barriers in double top gated silicon metal-oxide-semiconductor nanostructures
… in a double top-gated, enhancement-mode silicon metal-oxide-semiconductor (MOS) device structure are analyzed. Tunnel barriers implanted with a small number of antimony donor atoms and non-implanted tunnel barriers were both characterized electrically at liquid helium temperatures (T \u2248 4 K). …
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Theory and Experiments on Large Signal Surface Transport in Metal Oxide Semiconductor Capacitors
Made available in DSpace on 2014-12-12T20:54:49Z (GMT). No. of bitstreams: 1 7820961.pdf: 2333033 bytes, checksum: 587d25909e836b084eff37c19c990e60 (MD5) Previous issue date: 1978
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Microplasma Transistor With Quasi Metal-Oxide-Semiconductor (mos)/metal-Insulator-Metal (Mim) Electron Emitters
Modeling of these devices entailed solving the differential form of Poisson's equation, subject to particle flux continuity of the cathode. Comparison of the model predictions with experimental estimates of the sheath potential shows agreement between the two to within 5% over the entire range in …
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Properties of Silicon - Silicon-Dioxide Interface States in Thin-Oxide Mos (metal-Oxide Semiconductor) Structures
Made available in DSpace on 2015-05-12T22:38:52Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7317191.PDF: 5032878 bytes, checksum: 5a2c0456921a996696db9958e93ad39c (MD5) Previous issue date: 1972
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
One approach to saving energy in metal-oxide-semiconductor field effect transistors (MOSFETs) is to replace SiO2/Si structure with high dielectric constant (high-k) oxides on high mobility channel materials (e.g. InGaAs), which have the potential to achieve a comparable on current and operating …
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The Trapped Charge Interfacial Modulation of the Electron Beam Induced Current in Metal Oxide Semiconductor Capacitors
… (SEM) to selectively populate and generate the oxide traps. As the electron beam scans from a region of the MOSC in the WRITE state to a region in the ERASE state, the electron beam induced current (EBIC) exhibits an abrupt reduction in the lateral current response--the trapped charge …
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Experiments and Theory on the Characteristics of Metal-Oxide - Semiconductor Transistors in the Current Saturation Range
Made available in DSpace on 2014-12-08T22:24:30Z (GMT). No. of bitstreams: 1 6910660.pdf: 2926652 bytes, checksum: 88ff04c80f48f2006749eedcd6203e8f (MD5) Previous issue date: 1968
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Biological Agent Sensing Integrated Circuit (BASIC): A New Complementary Metal-oxide-semiconductor (CMOS) Magnetic Biosensor System
Fast and accurate diagnosis is always in demand by modern medical professionals and in the area of national defense. At present, limitations of testing speed, sample conditions, and levels of precision exist under current technologies, which are usually slow and involve testing the specimen under …
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Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
… tunnelling currents in contemporary silicon dioxide (SiO2) based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high dielectric constants (high-κ) are being studied as …
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Large-area CVD growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors
Two-dimensional semiconducting materials such as MoS₂ and WS₂ have been attractive for use in ultra-scaled electronic and optoelectronic devices because of their atomically-thin thickness, direct band gap, and lack of dangling bonds. Methods for large-area growth of 2D semiconducting materials are …
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A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections
Embargo set by: Seth Robbins for item 69550 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… strain engineering, and complementary metal-oxide-semiconductor (CMOS) compatible gold-free process, were developed to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in …
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A low dispersion 2-GHz comparator
… awaiting fabrication. Index Terms-Complementary metal oxide semiconductor transistor technology (CMOS technology), very large scale integration (VLSI), application specific integrated circuit (ASIC), silicon germanium (Si-Ge), integrated circuits (IC), automatic test equipment (ATE), personal …
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High-resolution transmission electron microscopy of III-V FinFETs
… for integration into future complementary metal-oxide-semiconductor technology due to their outstanding electron transport properties. InGaAs n-channel metal-oxide-semiconductor field-effect transistors have already demonstrated promising characteristics, and the antimonide material system …
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