Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 46 for “"Metal-Organic Chemical Vapor Deposition"”.
-
Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD)
… with epitaxial relationship using traditional vapor deposition techniques such as metal-organic chemical vapor deposition (MOCVD). Therefore, the novelty of non-planar morphology can be achieved using industrial scale high throughput deposition techniques. To realize the full potential of …
-
Substrate Dependence on the Growth and Texture of Lead Titanate and Lead Zirconate Titanate Thin Films by Metal Organic Chemical Vapor Deposition
Substrates employed for PT and PZT film growth in this study can be categorized as the single crystalline substrates, polycrystalline substrates, and the amorphous substrates. The PT films grown on the single crystal oxide substrates (MgO(100) and LaAlO$\sb3$(100)) are single crystalline and …
-
Transition metal allyls and hydrides as chemical vapor deposition precursors
… be prepared at low temperature (250$\sp\circ$C) metal-organic chemical vapor deposition of bis(allyl)palladium or (cyclopentadienyl)(allyl)palladium.
-
Fabrication and characterisation of ZnO nanostructures: from nanoscale building blocks to hybrid nanomaterials - towards emerging technologies in sensing applications
Metal oxide nanostructures characterized by multiple morphologies and structures are at the forefront of applications driven nanotechnology research. In particular, they represent a versatile solution for performance enhancement and applications in multifunctional devices and offer distinct …
-
Chemical vapor deposition of copper, copper(I) oxide, and silver from metal-organic precursors
Metal-organic chemical vapor deposition (MOCVD) from the tetrameric precursor copper(I) tert-butoxide, (Cu(O-t-Bu)) $\sb4$, results in the deposition of pure copper(I) oxide whiskers at 510 K and of copper metal with $\sim$2% oxygen contamination at 670 K. Quantitative analyses of the gaseous …
-
Thermal and dynamic processes in deposition, growth, and etching of materials: I. Thermal and collision-induced activation of alkyl intermediates on aluminum. II. Chemical vapor deposition and growth of silicide on copper
Chemical vapor deposition (CVD) is becoming an increasingly important manufacturing process for the fabrication of VLSI and ULSI devices. A major challenge in optimizing a CVD process is developing an understanding of the complex mechanistic pathways followed. The first section in this thesis …
-
System-Technology Co-Optimization of Scaled Electronics Based on Two-Dimensional Materials
… includes inventing a low-temperature (< 300 °C) metal-organic chemical vapor deposition (MOCVD) method for 2D materials on 8-inch wafers, investigating extreme device scaling and multi-channel transistors. Design-Technology Co-Optimization (DTCO) and SystemTechnology Co-Optimization (STCO) are …
-
Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… strain engineering, and complementary metal-oxide-semiconductor (CMOS) compatible gold-free process, were developed to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in …
-
Nanoscale Selective Area Epitaxy for Optoelectronic Devices
… by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum …
-
High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis
… will demonstrate a novel 8-inch, BEOL-compatible metal organic chemical vapor deposition (MOCVD) method for the synthesis of 2D transition metal dichalcogenide materials with growth temperature lower than 400°C. Highly-scaled high-performance MoS₂ transistors will also be investigated with …
-
Investigation of wide bandgap semiconductors for room temperature spintronic, and photovoltaic applications
… is investigated.</p> <p>Spin properties of metal-organic chemical vapor deposition (MOCVD) – grown gadolinium-doped gallium nitride (GaGdN) are studied and underlying mechanism is identified. GaGdN exhibits Anomalous Hall Effect at room temperature if it contains oxygen or carbon atoms but …
-
Microstructural Evolution in Mocvd-Derived Tantalum-Doped Tin Dioxide Thin Films and Subsequent Property Changes
… glass and A12O3(0001) substrates utilizing the metal-organic chemical vapor deposition (MOCVD) technique. The main focus of this study was to understand the structure-property relationship in the Ta-Sn-O material system. Microstructure of the films was characterized through x-ray diffraction …
-
Analysis of materials properties of thin film structures for thermoelectric and thermophotovoltaic applications
Metal-organic chemical vapor deposition (MOCVD) was used to grow InAsP graded layers and AlAs/GaAs superlattices for materials studies related to thermophotovoltaics and thermoelectrics respectively. High resolution x-ray diffraction (HRXRD) was used to determine the As concentration in each of the …
-
Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
… on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of …
-
First Demonstration of beta-phase Gallium Oxide Optical Waveguide in Visible-UV Spectrum
… waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). Their propagation losses in the visible spectrum were comprehensively studied via experiments and simulations of the finite difference method by varying the dimensions of the waveguides. The …
-
Piloting epitaxy with ellipsometry as an in-situ sensor technology
Epitaxial processes are deposition processes that produce crystalline films with nano-scale precision. Many compound semiconductor devices rely on epitaxy to produce high-quality crystalline films with a specified compositional profile as a function of film thickness. Although various epitaxial …
-
Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… in-plane lattice constant to graphene and chemical inertness and resistance to oxidation makes hBN an ideal material for the exploration of Van der Waals heterostructures made layer by layer between hBN/graphene related materials with new physics and applications. This thesis work focuses …
-
Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices
In this project, we implement modern metal organic chemical vapor deposition (MOCVD) technology to fabricate monolithic platforms which integrate traditionally incompatible materials with the ultimate goal of achieving high brightness green to amber light emitting diodes (LEDs) and laser diodes …
-
Multiferroic BiFeO3 films and nanostructures for hybrid energy harvesters
… the following work has been focused on the deposition by metal-organic vapor phase deposition of multiferroic BiFeO3 films and nanostructures. BiFeO3 is a multiferroic material and can maintain its properties in extreme environments thanks to its Curie and Neel temperatures well above room …
-
The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS
… interfaces of GaN and InGaN grown by sputter deposition and GaN grown by metal-organic chemical vapor deposition (MOCVD) with CdTe and CdS. First, the GaN and InGaN films were characterized by AFM and XRD, and it has been shown that the MOCVD samples have a very smooth surface and are single …
Page 1 of 3