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Showing 1 to 1 of 1 for “"Metal-Assisted Chemical Etching, β-Ga2O3"”.
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Metal-assisted chemical etching of β-gallium oxide
β-Ga2O3, with an ultra-wide bandgap (UWB) of ~ 4.6 – 4.9 eV and bulk substrate availability, has drawn enormous interest in the power electronics community. Fabricating high-aspect-ratio β-Ga2O3 3D nanostructures without surface damage is essential for next-generation power electronics. …