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Showing 1 to 1 of 1 for “"Metal-Assisted Chemical Etching, β-Ga2O3"”.

  1. Metal-assisted chemical etching of β-gallium oxide

    β-Ga2O3, with an ultra-wide bandgap (UWB) of ~ 4.6 – 4.9 eV and bulk substrate availability, has drawn enormous interest in the power electronics community. Fabricating high-aspect-ratio β-Ga2O3 3D nanostructures without surface damage is essential for next-generation power electronics. …

    uiuc Repository record for Metal-assisted chemical etching of β-gallium oxide (opens in a new tab)