Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"Metal oxide semiconductors, Complementary."”.
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A method for characterization of single-event latchup technologies as a function of geometric variation
Complementary metal-oxide-semiconductor (CMOS) technology is the dominant integrated circuit (IC) technology in modern electronics systems. As CMOS comprises of p-channel and n-channel transistors, there are parasitic PNPN paths that act as cross-coupled bipolar transistors capable of creating …
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Novel Sensing Approaches towards Ultimate MEMS Sensors
Within the past few decades, several micro and nano-electromechanical (MEMS and NEMS) accelerometers, magnetometers and vibration sensors utilizing various actuation and sensing mechanisms have been developed and demonstrated. These sensors are integral to various geographical, industrial, …
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Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.
… Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to …
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A nano-CMOS based universal voltage level converter for multi-VDD SoCs.
Power dissipation of integrated circuits is the most demanding issue for very large scale integration (VLSI) design engineers, especially for portable and mobile applications. Use of multiple supply voltages systems, which employs level converter between two voltage islands is one of the most …
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CMOS Active Pixel Sensors for Digital Cameras: Current State-of-the-Art
… Among the various types of image sensors, complementary metal oxide semiconductor (CMOS) based active pixel sensors (APS), which are characterized by reduced pixel size, give fast readouts and reduced noise. APS are used in many applications such as mobile cameras, digital cameras, Webcams, …
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Single event upset hardened CMOS combinational logic and clock buffer design
A radiation strike on semiconductor device may lead to charge collection, which may manifest as a wrong logic level causing failure. Soft errors or Single Event Upsets (SEU) caused by radiation strikes are one of the main failure modes in a VLSI circuit. Previous work predicts that soft error rate …
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CMOS digital pixel sensor array with time domain analogue to digital conversion
This thesis presents a digital pixel sensor array, which is the first stage of an ongoing project to produce a CMOS image sensor with on-chip image processing. The analogue to digital conversion is performed at the pixel level, with the result stored in pixel memory. This architecture allows fast, …
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Qualification of a CMOS linear image sensor LIS-1024
… prominent image sensor types are Complimentary Metal Oxide Semiconductor (CMOS) image sensors and Charge Coupled Devices (CCDs). While CMOS sensors have traditionally performed well in new applications, such as Personal Computer (PC) cameras (where CCDs were deemed too expensive), the year 2002 …