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A method for characterization of single-event latchup technologies as a function of geometric variation

Joplin, Matt2018

Complementary metal-oxide-semiconductor (CMOS) technology is the dominant integrated circuit (IC) technology in modern electronics systems. As CMOS comprises of p-channel and n-channel transistors, there are parasitic PNPN paths that act as cross-coupled bipolar transistors capable of creating …

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Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.

Ukirde, VaishaliUniversity of North Texas2007

… are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal …

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Schottky Field Effect Transistors and Schottky CMOS Circuitry

Vega, Reinaldo

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