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Showing 1 to 3 of 3 for “"Metal induced gap states (MIGS)"”.

  1. Scanning tunneling microscopy and spectroscopy of nanometer scale metallic features on silicon surfaces

    Nanometer scale metals are of great interest due to their potential applications in the future of molecular/atomic scale devices. For example, nanometer scale metal contacts on semiconducting single-walled carbon nanotubes (SWNTs) can determine the transport performance of SWNT based field effect …

    uiuc Repository record for Scanning tunneling microscopy and spectroscopy of nanometer scale metallic features on silicon surfaces (opens in a new tab)

  2. Band Engineering of Advanced Materials for Semiconductor Devices

    As the downscaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) continues, the short-channel effects (SCEs) and contact resistance severely degrade device performance. It is crucial to understand the physics at various interfacial regions of MOSFETs to provide guidance for …

    cambridge Repository record for Band Engineering of Advanced Materials for Semiconductor Devices (opens in a new tab)

  3. Modeling The Atomic And Electronic Structure Of Metal-Metal, Metal-Semiconductor And Semiconductor-Oxide Interfaces

    … of three such 'canonical' material interfaces - Metal-Metal, Metal-Semiconductor and Semiconductor oxide interfaces.</p> <p>An important contribution of this thesis is the development of a novel TB model of the electronic structure of industrially relevant metals such as Cu, Ag, Au, Al. The model …

    purdue-thes Repository record for Modeling The Atomic And Electronic Structure Of Metal-Metal, Metal-Semiconductor And Semiconductor-Oxide Interfaces (opens in a new tab)