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Showing 1 to 3 of 3 for “"Metal gates"”.

  1. MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs

    … as ALD, layer transfer, high-k dielectrics, and metal gates are now being used to explore these MOSFETs. III-V materials are also being investigated for possible use in quantum-mechanical devices (such as tunnel transistors), in spin-FET devices, and in qubits and memory cells. However, there are …

    siu-theses Repository record for MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs (opens in a new tab)

  2. A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes

    … is thermally stable in contact with silicon and metal gates. However, HfO2 is vulnerable to the diffusion of oxygen that causes formation of a low-k interfacial (silicon oxide or silicate) layer at the Si interface and boron penetration when combined with the p+ poly-Si gate technology. In …

    texas Repository record for A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes (opens in a new tab)

  3. Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications

    … the need for high-K dielectric based gate-oxide Metal Oxide Semiconductor Field Effect Transistors for sub-45 nm technology nodes. Gate oxides of hafnium seem to be the nearest and best alternative for silicon dioxide, when material, thermal and structural properties are considered. Usage of …

    njit Repository record for Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications (opens in a new tab)