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Showing 1 to 20 of 43 for “"Metal Oxide Semiconductor Field Effect Transistor"”.
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Resonant Gate Drive Techniques for Power MOSFETs
… loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circuit adds minor complexity to conventional gate …
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Development of repetitive current controller using raspberry PI for 3 phase active power filter for nonlinear load improvement
… converts DC to AC waveform. The inverter use Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Raspberry Pi board is used to supply the pulse width modulation (PWM) signal to the APF. Lastly, the repetitive controller is designed so that the PWM generated is the same signal to be …
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Comparative analysis of analog LDO design
… concluded that a Type-B amplifier with n-channel metal oxide semiconductor field effect transistor (MOSFET) output stage or a Type-A amplifier with p channel MOSFET (PMOS) output stage yields the best PSR. Digital LDO regulator topologies have also been discussed. The digital LDO regulator is …
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Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
The tunneling field-effect transistor (TFET) is a promising device candidate to overcome the 60 mV/decade subthreshold swing (S) limitation of the conventional metal-oxide-semiconductor field-effect transistor (MOSFET). TFET exploits gate modulated band-to-band tunneling (BTBT) to achieve a steep S …
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Full band ensemble Monte Carlo simulation of silicon devices
… approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used …
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A low dispersion 2-GHz comparator
… awaiting fabrication. Index Terms-Complementary metal oxide semiconductor transistor technology (CMOS technology), very large scale integration (VLSI), application specific integrated circuit (ASIC), silicon germanium (Si-Ge), integrated circuits (IC), automatic test equipment (ATE), personal …
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Nanowire Zinc Oxide MOSFET Pressure Sensor
… kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of …
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Study of subthreshold behavior of FinFet
The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET …
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Linear-time 3-D thermal methods for transient electro-thermal simulations
… two methods. The problem of interest is a large metal-oxide semiconductor field-effect transistor (MOSFET). Simulation results of both LIM and DGM are provided and validated using Ansys Icepak, a commercially available thermal analysis tool. Lastly, some comparisons and future work are provided, …
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The Si/SiO2 Interface Roughness
The Si/Si02 interface roughness has important effects on the performance of metal-oxide semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new …
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Magnetically controlled chemical potential in field effect devices
… coupled materials. An aluminium single electron transistor (SET) lithographically fabricated on top of a magnetic gate is used to characterise the chemical potential anisotropy of Ga0 .97Mno. 03As and Gao.941\1no.o6As. The conductance variation of the SET provides a direct probe of the …
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Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors
Metal-oxide semiconductor field-effect transistor (MOSFET) scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Moore’s Law. After forty years of advances in integrated circuit (IC) technology, the scaling of silicon (Si) MOSFET has …
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The Si/SiO(2) Interface Roughness
… Si/SiO$\sb2$ interface roughness has important effects on the performance of metal-oxide-semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new …
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Techniques for low power analog, digital and mixed signal CMOS integrated circuit design
… dissertation, several low power complementary metal-oxide-semiconductor (CMOS) integrated circuit design techniques are investigated. A metal-oxide-semiconductor field effect transistor (MOSFET) can be operated at a lower voltage by forward-biasing the source-substrate junction. This approach …
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Additive Fabrication and Soft -Lithographic Patterning of Microelectronic Devices
… vapor deposition (CVD) of platinum and palladium metal films on silicon, which are used extensively in the microelectronics industry to make metal silicide interconnects. The fabrication of platinum silicide Schottky diodes described in chapter 3 demonstrates the efficacy of soft-lithographically …
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Programmable Current Control of Silicon Field Emitter Arrays Using Gate-All-Around MOSFETs
Silicon field emitter array (FEA) technology has great potential for applications such as electron microscopy, vacuum electronics, and X-ray sources. However, some challenges such as emitter tip burnout and spatial and temporal non-uniformity of emission current impede the adoption of FEAs in these …
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Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
… with high dielectric constant (high-k) gate oxides, for Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based devices. The motivation for employing high mobility channel materials is to reduce power dissipation in integrated circuits while also providing improved performance. One …
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Surge-energy and Overvoltage Robustness of Cascode GaN Power Transistors
… via avalanche, the GaN high-electron-mobility transistor (HEMT) has no avalanche capability and withstands surge energy by its overvoltage capability. However, a comprehensive study into the surge-energy robustness of the cascode GaN HEMT, a composite device made of a GaN HEMT and a Si …
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High power wide bandgap cascode switching circuits
Emerging wide bandgap (WBG) power transistors are capable of improving the efficiency of mains voltage power electronic circuits. Several commercial WBG transistors are now available, but all exhibit undesirable gate drive characteristics. The cascode circuit has been suggested as a solution to …
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Power Management and Power Conditioning Integrated Circuits for Near-Field Wireless Power Transfer
Near-field wireless power transfer (WPT) technology facilitates the energy autonomy of heterogeneous systems, significantly augmenting complementary metal-oxide-semiconductor field-effect-transistor (CMOS) technology. In low-power wearable devices, existing power conditioning integrated circuits do …
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