Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 38 for “"Memory device"”.
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Flexible nano-memory device by zinc oxide nanorod arrays
Memory is one of the key techniques for information technology. It is highly desired to have memory device with flexible characteristic for special applications. The challenges for archiving flexible memory are not only restrained by current materials but also existing memory mechanism, while …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two subcategories: 1) the …
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Non-Volatile Memory Adaptation in Asynchronous Microcontroller for Low Leakage Power and Fast Turn-on Time
… asynchronous non-volatile magnetic random-access-memory (RAM) to achieve low leakage power and fast turn-on. This asynchronous non-volatile RAM is designed with a Spin-Transfer Torque (STT) memory device model and CMOS transistors in a 65 nm technology. A self-timed Quasi-Delay-Insensitive 1 KB …
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pinMOS Memory
A novel, non-volatile, organic capacitive memory device called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with multiple-bit storage that can be programmed and read out electrically and optically. The diode-based architecture simplifies the fabrication process, and makes further …
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Floating gate engineering for novel nonvolatile flash memories
… endurance and longer retention has push flash memory technology, which is predominant and the driving force of the semiconductor nonvolatile memory market in recent years, to the position facing great challenges. However, the conventional flash memory technology using continuous highly doped …
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Automatic transcription of keyboard music.
… is monitored and information is stored in a memory device. Hardware is developed in order to perform this task. The latter section involves processing the information using software computer programs. Two types of output are obtained, i.e. an alphanumeric printout from a teletype and a staff …
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Magnetoresistive Random Access Memory (MRAM) technology : current advancement and future development
… one of the key utilities in modern computer. The memory industry grows as demand for denser, smaller, cheaper and faster memory device increases. The term memory has been used widely in computing jargon to refer to random access memory (RAM). RAMs are built with steady improvement over the years …
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Amorphous silicon thin film transistor as nonvolatile device.
… Floating gate n-channel a-Si:H TFT nonvolatile memory device with a thin a- Si:H layer embedded in the SiNx gate dielectric layer has been prepared and studied. The hysteresis of the TFT's transfer characteristics has been used to demonstrate its memory function. A steady threshold voltage …
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Defect and electrical properties of high-K̳ dielectric Gd₂O₃ for magneto-ionic and memristive memory devices
… as key components in a variety of thin film memory devices, including those based on magneto-ionic and memristive behavior. In this work, we focus on the rare earth sesquioxide, Gd₂O₃, a well-known high-κ dielectric that has exhibited a variety of electrolytic properties during the …
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Suspended Gate Silicon Nanodot Memory
The non-volatile memory market has been driven by Flash memory since its invention more than three decades ago. Today, this non-volatile memory is used in a wide variety of devices and systems from pen drives, mp3 players to cars, planes and satellites. However,the conventional floating gate memory …
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Demystifying CXL type-2 devices—with composable CXL-SSDS as a case study
… defines three protocols for three classes of devices, each with distinct capabilities. Commercial adoption has arrived first for CXL Type-3 devices, with CXL Type-2 devices emerging afterward—making it timely to clarify CXL Type-2 device’s capabilities and applications. We first examine three …
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Current-induced Dynamics of Easy-Plane Antiferromagnets
Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, …
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Ion transport in multilayer solid-state nanopores for memory and biosensing applications
… for next-generation nanofluidic, sensing, and memory device applications.
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Electrical properties of various single-wall carbon nanotube networks
… integrated into metal- insulator-semiconductor devices are discussed in view of organic memory device applications.
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Design of a robust ratiometric sensor and a long-term memory genetic toggle switch
… to design and construct novel biological parts, devices, and systems that do not exist in nature. It has the potential to revolutionize many industries, including medicine, agriculture, and energy production. Despite its potential, synthetic biology is still mainly confined to laboratory …
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Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles : principles of operation, fabrication, measurements, and analysis
… for future high density, low-voltage nonvolatile memory devices. Most previous works have studied nanoparticles of larger than 5 nm size and exhibited bulk-like trapping characteristics. Technologically viable and competitive future devices, however, will require nanoparticles of sub 3-nm …
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Quantitative study on current-induced effects in an antiferromagnetic insulator/Pt bilayer film
… making next generation of magnetic random access memory with advantages in speed and density. However, a full understanding of the recent prototypical spinorbit torque antiferromagnetic memory devices requires more quantitative and systematic study. In this thesis, we study the current-induced …
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Second Generation Data-Logging System for Long-Duration Field Measurement of Vibration Exposure and Grip Force
… record vibration information using data-logging devices. Often, many devices, whether they are commercial or custom-built devices, use frequency weightings and full day estimations to measure vibration exposure, in which data can be lost due to pre-software filtering and short measurement …
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Development of Metal Halide Perovskites for Memristor Applications
… option for next-generation non-volatile memory applications. RS devices generally have a two-terminal metal-insulator-metal structure, where a variety of novel materials have been employed as the insulator layer. Among them, halide perovskites have drawn extensive attention owing to their …
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