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Showing 1 to 12 of 12 for “"Magnetoelektronik"”.
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Giant Magnetoresistance - eine ab-initio Beschreibung
… Fe/Cr-Vielfachschichten, die Standardsysteme der Magnetoelektronik, angewandt. Es werden die Abhängigkeit der Streuquerschnitte, der spezifischen Restwiderstände und des GMR von der Art und der Lage der Übergangsmetalldefekte in Co/Cu- und Fe/Cr-Vielfachschichten diskutiert. Darüber hinaus wird …
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Kopplungen und Riesenmagnetowiderstand (GMR) in Mehrlagensystemen für die Magnetosensorik
Die Messung magnetischer Felder ist in der Sensorik von großem Interesse. Benötigt werden dazu physikalische Effekte, die magnetische Größen in elektrische Größen umsetzen. Ein interessanter Vertreter ist dabei der Riesenmagnetowiderstand (GMR). Systeme, die den GMR zeigen, sind Thema dieser …
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Electronic spin transport in bilayer and single layer graphene
Graphene has drawn plenty of attention since its discovery in 2004. Due to its excellent properties, such as long spin relaxation length and gate-tunable spin transport, graphene is expected to be a potential candidate for spintronics applications. In this thesis, the systematic study of the spin …
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Spin-Bahn-Kopplung und zweidimensionale Zustände in ultradünnen, magnetischen Schichten
The aim of this thesis has been to determine the electronic structure atinterfaces between ferromagnetic and paramagnetic layers, in paramagneticoverlayers on ferromagnetic substrates, and of ferromagnetic bulk-likelayers itself. Especially, in these layer systems we were interested inhow the …
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MOVPE growth and characterization of Cr-doped GaN
In this thesis chromium (Cr) incorporation during GaN growth by metal organic vapor phase epitaxy (MOVPE) was studied for the first time with the intention of producing a dilute magnetic semiconductor (DMS) with room temperature ferromagnetism. To this end the following growth parameters were …
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Ferromagnetic manganites: spin-polarized conduction and competing interactions
Electronic properties of solids are vitally important for modern technology, one may think of microelectronics, magnetic data storage, communication technologies and others. Sometimes, it seems possible to postpone the step of fundamental understanding when starting the application of a new …
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Nanomagnetismus von epitaktischen Fe(110)- und CrO 2 (100)-Strukturen im Hinblick auf potentielle spinelektronische Anwendungen
As a result of the continuously increasing demands on the information technology within the last years new concepts of data storage systems have been developed. The combination of electronic and magnetic properties within so called spinelectronic or magnetoelectronic devices plays a key role in …
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Magnetische Halbleiter zum Einsatz in der Spinelektronik : Europiumsulfid und magnetisch dotiertes Galliumnitrid
In this work, magnetic semiconductors were investigated. The work on magnetic semiconductors is motivated by the great interest in the field of spinelectronics in recent years. Of particular interest are magnetic semiconductors which are ferromagnetic with Curie-temperatures well above room …
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Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten
Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the …
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Time resolved electrical injection of coherent spin packets through a Schottky barrier
During the last few years, the manipulation of the electron’s spin degree of freedom for information processing was explored in the new field of spintronics. Future spintronic devices rely on the generation of a spin imbalance in a semiconductor. Electrical spin injection from a ferromagnet into a …