Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 31 for “"Magnetic tunnel junctions"”.
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Tunneling spectroscopy of magnetic tunnel junctions
In this thesis, magnetic tunnel junctions based on MgO barriers have been prepared and investigated. Different aspects were discussed, in order to understand the physical limitations to the TMR ratio of the MTJs and, hence, their performance as a basis of spintronic devices.
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Cobalt-based Heusler compounds in magnetic tunnel junctions
… years due to possible new applications, e.g., a magnetic random access memory (MRAM), logic and sensors. The spin of the electrons is used as an additional degree of freedom in contrast to common electronic devices. The main constituent of many spintronic devices is the magnetic tunnel junction …
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Stochastic In-memory Computing Using Magnetic Tunnel Junctions
… framework – stochastic in-memory computing using magnetic tunnel junctions. By introducing thermally stable and unstable magnetic tunnel junctions as CMOS-compatible circuit building blocks, both general-purpose and application-specific in-memory computing accelerators can be synthesized, …
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A study of surface roughness issues in magnetic tunnel junctions
This research focuses on the spin-dependent tunneling phenomenon in magnetic tunnel junction. Based on the free electron model, it is found that the tunneling magnetoresistance and the exchange coupling are greatly modified by introducing the interface roughness into the basic …
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INVESTIGATION OF MATERIALS AND ANALYSIS TECHNIQUES FOR PERFORMANCE ENHANCEMENT OF PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS
Perpendicular Magnetic tunnel junction (p-MTJ) is a promising candidate for future non-volatile memories. Some of the factors that are critical for the performance of p-MTJ are thermal stability, magnetic immunity against the external magnetic field and switching current (Ic). In this thesis, the …
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Dielectric reliability and spin dependent transport in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions
… provides a means to influence the electrons by a magnetic field. Thus, in ferromagnetic (FM) materials, the motion of an electron depends on its spin orientation with respect to local magnetization. This gives rise to interesting new effects to the field of spintronics. Spintronic effects occur on …
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Pac-man shaped magnetic tunnel junctions for SEU-resistant CMOS-based magnetic flip flops for space applications
Pac-man shaped magnetic tunnel junctions are proposed for CMOS-based magnetic flip flops for space applications. Micromagnetic simulation was performed on single layer elongated Pac-man shape, modified rectangular shape, and square shaped bilayer for magnetization process. The experimental effect …
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Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions
… experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single …
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Memristive tunnel junctions
… chapters. In the first chapter, we reveal that magnetic tunnel junctions fit in the recently emerged field of memristors and memristive systems. We describe how this 'hot topic' emerged from the combination of two research fields and take a step further by including magnetic systems. The …
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Magnetic tunnel junction devices and circuits for in-memory, neuromorphic and radiation hard computing
The magnetic tunnel junction is a memory device at the core of emerging magnetic random access memory technology. As CMOS technology is approaching its physical limits, spintronics, with benefits like non-volatility and normally-off behavior, is a promising candidate for next-generation artificial …
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The development of magnetic tunnel junction fabrication techniques
… room temperature magnetoresistance (MR) in magnetic tunnel junctions in 1995 sparked great interest in these devices. Their potential applications include hard disk read head sensors and magnetic random access memory (MRAM). However, the fabrication of repeatable, high quality magnetic …
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Noise detection and transport measurements of spin valve systems.
… noise not only limits the performance of magnetic devices in practical applications but also provides valuable physical insights into these devices. The first part of this thesis discusses how the low frequency noise in magnetic tunnel junctions and giant magnetoresistance devices can be …
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Preparation and characterisation of magnetic single and double barrier junctions
The structural, magnetic and electrical properties of magnetic tunnel junctions (MTJs) are investigated, including the basics of tunnel magnetoresistance (TMR) and the used analytical and preparation tools. The first experimental chapter looks into the unidirectional anisotropy of exchange biased …
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Magnetism in Two-Dimensional van der Waals Materials
… to measure and electrically control the magnetic ordering of ultrathin CrI3. I also present a new approach to probe the layer-dependent magnetic ordering by electron tunneling through van der Waals spin-filter magnetic tunnel junctions, where a few-layer crystal of CrX3 serves as the …
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Magnetoresistance and ion bombardment induced magnetic patterning
In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure …
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A 4kb memory array for MRAM development
The circuits for a A 4kb array of Magnetic Tunnel Junctions (MTJs) have been designed and fabricated in a 0:18¹m CMOS process with three levels of metal. Support circuitry for addressing, reading, writing, and test mode probing enables the characterization of the switching of a thin-film …
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Magnetic domain wall devices : from physics to system level application
… of its charge counterpart. Spin transfer torque-magnetic random access memory (STT-MRAM) is considered one of the most mature nonvolatile memory technologies for next generation computers. Spin based devices show promises also for beyond-CMOS, in memory computing and neuromorphic accelerators. In …
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