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Showing 1 to 15 of 15 for “"Magnetic tunnel junction"”.
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The development of magnetic tunnel junction fabrication techniques
… room temperature magnetoresistance (MR) in magnetic tunnel junctions in 1995 sparked great interest in these devices. Their potential applications include hard disk read head sensors and magnetic random access memory (MRAM). However, the fabrication of repeatable, high quality magnetic …
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Magnetic tunnel junction devices and circuits for in-memory, neuromorphic and radiation hard computing
The magnetic tunnel junction is a memory device at the core of emerging magnetic random access memory technology. As CMOS technology is approaching its physical limits, spintronics, with benefits like non-volatility and normally-off behavior, is a promising candidate for next-generation artificial …
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Development of magnetic tunnel junction (MTJ) sensors for the detection of single magnetic particles
… of biomolecules. In these biosensors, magnetic microsized and nanosized particles have been used as markers of biomolecules. The concept of combining magnetic particles with the sensitivity of magnetoresistive transducers was developed initially by Baselt et al. from the Naval Research …
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A study of surface roughness issues in magnetic tunnel junctions
This research focuses on the spin-dependent tunneling phenomenon in magnetic tunnel junction. Based on the free electron model, it is found that the tunneling magnetoresistance and the exchange coupling are greatly modified by introducing the interface roughness into the basic …
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INVESTIGATION OF MATERIALS AND ANALYSIS TECHNIQUES FOR PERFORMANCE ENHANCEMENT OF PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS
Perpendicular Magnetic tunnel junction (p-MTJ) is a promising candidate for future non-volatile memories. Some of the factors that are critical for the performance of p-MTJ are thermal stability, magnetic immunity against the external magnetic field and switching current (Ic). In this thesis, the …
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Stochastic In-memory Computing Using Magnetic Tunnel Junctions
… framework – stochastic in-memory computing using magnetic tunnel junctions. By introducing thermally stable and unstable magnetic tunnel junctions as CMOS-compatible circuit building blocks, both general-purpose and application-specific in-memory computing accelerators can be synthesized, …
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Magnetic logic circuits with high bit resolution for hardware acceleration
… circuits. We explore a logic device based on magnetic domain walls, which are electrically movable boundaries between oppositely magnetized domains of a wire, for applications to hardware acceleration. A domain wall logic device takes current on the input, which moves a magnetic domain wall to …
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Exploiting the Spin Of Photons and Electrons in Light-Matter Interactions
… we present the all-optical manipulation of magnetic order in ferrimag- netic alloy Gd(FeCo) using sub-picosecond laser pulses as the ultrafast stimuli. The instantaneous heating of the electron temperature due to light absorption triggers the energy and angular momentum exchange between the …
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Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions
… experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single …
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Unidirectional Magnetoresistive Behaviors: Materials, Characterization, and Prospects
… consumption. However, using the three-terminal magnetic tunnel junction structure for read out has become one of bottlenecks for the application of any SOT devices. Two-terminal SOT unit with the same read and write lines needs to be developed. The unidirectional spin Hall magnetoresistance …
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Grazing Incidence X-ray Scattering from Magnetic Thin Films and Nanostructures
… has been used to characterize the structure of magnetic thin films and periodic nanostructures. The combined metal and metal oxide films have been chosen to clarify the effects of growth processing techniques in technologically important magnetic and magnetoresistive thin film materials, and …
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Design of robust spin-transfer torque magnetic random access memories for ultralow power high performance on-chip cache applications
<p>Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (MTJ) has become the leading candidate for future universal memory technology due to its potential for low power, non-volatile, high speed and extremely good endurance. However, conflicting read …
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Cobalt-based Heusler compounds in magnetic tunnel junctions
… years due to possible new applications, e.g., a magnetic random access memory (MRAM), logic and sensors. The spin of the electrons is used as an additional degree of freedom in contrast to common electronic devices. The main constituent of many spintronic devices is the magnetic tunnel junction …
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Thermal transport in two-dimensional materials and magnetic multilayers
… Lastly, I study thermal transport properties of magnetic tunnel junctions (MTJs). MTJs show interesting charge and spin dynamics when they are subject to temperature gradient, such as the tunnel-magneto Seebeck effect and spin Seebeck tunneling. To harness the thermally induced spin behaviors, it …