Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 41 for “"MRAM"”.
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An analysis of MRAM based memory technologies
MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called "the ideal memory", it can potentially combine the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk, and all this while consuming a very low amount of power. …
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A 4kb memory array for MRAM development
… can be studied and compared to current MRAM designs that switch the MTJ with current-induced magnetic fields. Using this array design, both high speed digital and quasi-static dI/dV experiments can be conducted to investigate the nature of the MTJ resistance hysteresis and process …
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Study of Magnetization Switching for MRAM Based Memory Technologies
… solutions as magnetic random access memories - MRAMs. This dissertation is intended to provide a theoretical analysis of static and dynamic magnetization switching of magnetic systems within the framework of critical curve (CC). Based on the time scale involved, a quasi-static or dynamic CC …
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Magnetoresistive Random Access Memory (MRAM) technology : current advancement and future development
… (R/W) endurance. Magnetoresistive RAM (MRAM) offers such possibility. MRAM has just entered in 2002 with 128kbit product, but it has improved to reach 16 Mbit density in the year 2009, that makes a 128 density multiplication in 7 years. The prototyping has gone through an even higher …
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Signal processing methods to enhance the accuracy of MRAM-based in-memory architectures
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2024-08-01
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The Future of Computing: An Energy-Efficient In-Memory Computing Architectures with Emerging VGSOT MRAM Technology
… torque (VGSOT) magnetic random-access memory (MRAM) technology. Beyond its role as a non-volatile storage solution, this architecture facilitates a diverse array of In-Memory Computing (IMC) operations, inclusive of logic-inside-memory (LinM/LiM), in-memory-dot- product multiplication tailored …
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Practical Pathways to Efficient MRAM: Spin-Orbit Torques, Low-Damping, and Anomalous Hall Conductivity in Polycrystalline Materials
There are multiple pathways forward to next generation magnetic random access memory. In this thesis we explore two simple solutions with industry implementation in mind. The first is a low-damping (α< 5×10⁻³) ferromagnetic single-layer with modest anti-damping spin-orbit torque (SOT), $θ_{DL} ≈ …
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Nanoscale Nonvolatile Memory Circuit Design using Emerging Spin Transfer Torque Magnetic Random Access Memory
… torque magnetic random access memory (STT-MRAM) is suitable for embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly potential nonvolatile memory (NVM) technology. There has been a growing demand to improve the efficiency and reliability of the NVM circuits and …
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Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems
… elements, spin-transfer torque magnetic RAM (STT-MRAM) is identified as one of the most attractive alternatives to conventional SRAM. However, several design challenges of STT-MRAM such as shared read and write current paths, single-ended sensing, and high dynamic power are major challenges to be …
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Analysis of magnetic random access memory applications
Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory in the computer industry. This need for nonvolatile computer memory has resulted in the dramatic evolution of MRAM technology in the past ten years. Currently in the latter stages of development, …
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Design of robust spin-transfer torque magnetic random access memories for ultralow power high performance on-chip cache applications
… torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (MTJ) has become the leading candidate for future universal memory technology due to its potential for low power, non-volatile, high speed and extremely good endurance. However, conflicting read and write …
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Mechanism and assessment of spin transfer torque (STT) based memory
… have a smaller cell size and write current than MRAM, and also capable of what MRAM promises: fast, dense, and non-volatile. A technological assessment was conducted to verify the claims of STT-RAM by understanding the physical principles behind it. A comparison of performance parameters in …
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Magnetische, thermische und dielektrische Stabilität von magnetischen Tunnelelementen
… (Magnetic Random Access Memory, MRAM) hinsichtlich ihrer thermischen, magnetischen und dielektrischen Stabilität untersucht. Prinzipiell besteht das geplante MRAM aus einer großen Zahl in Matrixform angeordneter Speicherzellen. Als einzelne Speicherzelle wird ein sogenanntes …
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Avaliação genética da produção de leite no dia do controle de caprinos de aptidão leiteira utilizando modelos de regressão aleatória multicaracterísticos
… de regressão aleatória multicaracterísticos (MRAM). Os objetivos específicos foram: Estudar as divergências genéticas entre as quatro primeiras lactações de caprinos da raça Alpina, utilizando modelos de regressão aleatória unicaracterísticos (MRAU) para cada lactação; demonstrar a aplicação …
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Exploring Spin-transfer-torque devices and memristors for logic and memory applications
… we investigated reliable design of STT-MRAM bit-cells and addressed the conflicting read and write requirements, which results in overdesign of the bit-cells. Further, a Device/Circuit/Architecture co-design framework was developed to optimize the STT-MRAM devices by exploring the design …
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Study of Magnetization Switching in Coupled Magnetic Nanostructured Systems
… Magnetoresistive random access memory (MRAM) is an important example of devices where the use of SAF structure is essential. To support the understanding of the SAF magnetic behavior, its configuration and application are reviewed and more details are provided in an appendix. Current …
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Magnetic properties of lithographically patterned thin film magnetic elements for magnetic random access memory applications
… of future magnetic random access memory (MRAM) devices, the magnetic properties of the patterned elements, including magnetization switching mechanisms, switching field distribution, magnetic thermal stability, and magnetostatic interactions, have been studied using magnetic force …
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Nanostructuring magnetic thin films using interference lithography
… and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is designed and built which will allow exposure of gratings and grids with a minimum …
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Magnetic domain wall devices : from physics to system level application
… torque-magnetic random access memory (STT-MRAM) is considered one of the most mature nonvolatile memory technologies for next generation computers. Spin based devices show promises also for beyond-CMOS, in memory computing and neuromorphic accelerators. In the future cognitive era, …
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Optimising The Role Of Facilities Management (FM) In The Property Development Process (DP):The Development Of An FM-DP Integration Framework
This thesis is a manifestation of efforts to integrate FM into the development process through a greater involvement of Facilities Managers in the property development industry. It also presents an original contribution to knowledge in a form of a validated best practice, which is identified as the …
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