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Showing 1 to 6 of 6 for “"MOVPE growth"”.
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MOVPE growth and characterization of Cr-doped GaN
… thesis chromium (Cr) incorporation during GaN growth by metal organic vapor phase epitaxy (MOVPE) was studied for the first time with the intention of producing a dilute magnetic semiconductor (DMS) with room temperature ferromagnetism. To this end the following growth parameters were …
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MOVPE growth and characterization of Al Kappa Ga 1 - Kappa N/GaN heterostructures for HEMT application
In this thesis the MOVPE growth of AlN, GaN and AlGaN/GaN heterostructures on sapphire substrates was investigated with respect to HEMT application. The prerequisites for excellent HEMT devices were defined with respect to their structural properties: the HEMT structure should consist of a highly …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… and photovoltaics. These devices require the growth of high quality III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, …
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Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).
… grown by metal-organic vapour phase epitaxy (MOVPE), and of the final concentrator solar cell devices. A special emphasis is put on the optimization of the solar cell concentration response, as the most important distinctive characteristic when compared to other GaInP/GaAs dual-junction solar …
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Growth, processing and chracterization of gallium nitride based coaxial LEDs grown by MOVPE
… and nanowall metal organic vapor phase epitaxy (MOVPE) growth process has enhanced the possibility of these LEDs going into production from laboratory. Previous work has shown that these nanowires exhibited an intense photoluminescence (PL), in spite of their large surface-area to volume ratio, …
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
… research interest. However, group III-nitride growth related issues – predominantly the high defect densities due to lacking lattice matched substrates – limit the quality and life time of the HEMTs. In the AlGaN/GaN heterostructure the GaN buffer layer is particularly important for that …