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Showing 1 to 3 of 3 for “"MOVPE growth"”.
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… and photovoltaics. These devices require the growth of high quality III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, …
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Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).
… grown by metal-organic vapour phase epitaxy (MOVPE), and of the final concentrator solar cell devices. A special emphasis is put on the optimization of the solar cell concentration response, as the most important distinctive characteristic when compared to other GaInP/GaAs dual-junction solar …
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Growth, processing and chracterization of gallium nitride based coaxial LEDs grown by MOVPE
… and nanowall metal organic vapor phase epitaxy (MOVPE) growth process has enhanced the possibility of these LEDs going into production from laboratory. Previous work has shown that these nanowires exhibited an intense photoluminescence (PL), in spite of their large surface-area to volume ratio, …