Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 17 of 17 for “"MOSFET Devices"”.
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Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
… MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS …
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Characterization and Modeling of Low Frequency Noise and Dielectric Traps in Scaled MOSFET Devices
… The high-K materials are introduced into the MOSFET structure to reduce the gate leakage current, increase the gate capacitance for current drive and reduce short channel effects. However, the oxide trap density in these materials is intrinsically higher and that leads to stronger trapping …
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Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control
… scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel …
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Micro-scale processing of diamond structures and devices
… such as micro-lensed micro-VECSEL photonic devices were also demonstrated. Utilising ICP Ar/Ch plasma etching and other processes, prototype diamond electronic devices such as diamond MISFETs and MOSFETs have been fabricated. To realize such diamond FET devices, ohmic contacts with low …
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Device and Circuit Level EMI Induced Vulnerability: Modeling and Experiments
… field-effect-transistors (MOSFETs) in the ICs may be disrupted under EMI conditions due to transient voltage-current surges, and their internal states may change undesirably. In this work, the vulnerabilities of silicon MOSFETs under EMI are studied at the device and the …
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Vertically integrated transistors for field emission applications
Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability …
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Effect of MOSFET threshold voltage variation on high-performance circuits
… that adaptively biases the body terminal of MOSFET devices to control this threshold voltage variation. Based on this model, recommendations on how to effectively use the technique in future technologies will be presented. Second, with threshold voltage scaling, sub-threshold leakage power is …
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Evaluation of Voltage-Controlled Active Gate-Drivers for SiC MOSFET Power Semiconductors
… use of Silicon-Carbide [Silicon-Carbide (SiC)] devices come a host of advantages, including higher switching frequency, improved thermal performance, and higher voltage rating. This higher switching frequency can reduce the size of the con- verter system, but is typically associated with higher …
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Investigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs
… benefit of strained-Si/SiGe heterostructure MOSFETs designed for nanoscale (sub-50-nm) gate lengths with the aid of device fabrication and electrical measurements combined with computer simulation. MOSFET devices fabricated on bulk-Si material are scaled in order to achieve gains in …
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Expansibility Evaluation of a Two-dimensional Access Array for Quantum Computing
… of quantum dots in 40 nm commercially-available MOSFET devices. I benchmark those against a finFET of the same dimensions, designed for quantum operation. I reflect on the readiness of industrial CMOS devices for use in quantum computing. Then, I assess the operation of control transistors in a …
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Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films
… for the development of the next generation of MOSFET devices. The scientific community has misinterpreted the mechanism behind SOI dewetting, attributing it to a stress-driven instability. In this work, we characterize and measure the kinetics and geometry of thermally-activated dewetting in …
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Atomic -Scale Statistical Models of Semiconductor Device *Reliability
… semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen (deuterium) bond dissociation by electronic excitation for both the interface and scanning tunneling microscope induced silicon-hydrogen …
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Atomic Scale Statistical Models of Semiconductor Device Degradation
… semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen(deuterium) bond dissociation by electronic excitation for both the interface and scanning tunneling microscope induced siliconhydrogen …
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An electrical power system for CubeSats
… but not limited to radiation effects on MOSFET devices; this poses one of the greatest challenges to space-based power systems. To this extent, the different radiation-induced effects and their implications are looked at, and mitigation strategies are discussed. A review of current …
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Experimental investigation of semiconductor losses in cryogenic DC-DC converters
… focusing on the losses in the semiconductor devices. The prototypes operated from 120 V and 500 V DC supplies at power levels up to 500 W using MOSFET devices and ultrafast, Schottky and silicon carbide diodes. The semiconductors were all in commercial TO220 packages. Although MOSFET on-state …
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Enhanced Gate-Driver Techniques and SiC-based Power-cell Design and Assessment for Medium-Voltage Applications
… environments. However, to utilize the SiC MOSFET device to achieve those next-generation, high-density, high-efficiency power electronics converters, one must solve a plethora of challenges. For the MV SiC MOSFET device, a high-performance gate-driver (GD) is a key component required to …
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Silicon on Ferroelectric Insulator Field Effect Transistor (SOFFET): A Radical Alternative to Overcome the Thermionic Limit
The path of down-scaling traditional MOSFET is reaching its technological, economic and, most importantly, fundamental physical limits. Before the dead-end of the roadmap, it is imperative to conduct a broad research to find alternative materials and new architectures to the current technology for …