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Showing 1 to 5 of 5 for “"MOS-FET"”.

  1. Distributed scalable model for CMOS FET power amplifier

    … development and results for a high-multiplicity MOS FET power amplifier model using layout transmission line considerations. ii

    uiuc Repository record for Distributed scalable model for CMOS FET power amplifier (opens in a new tab)

  2. Modeling and realization of an ultra-short channel MOSFET

    … field-effect transistor (MOSFET) has made the enormous miniaturization of integrated circuits possible. The answer to the question of how far this miniaturization can be driven is up to now not quite clear. The present thesis introduces a novel scheme for the fabrication of …

    aachen Repository record for Modeling and realization of an ultra-short channel MOSFET (opens in a new tab)

  3. Strained and unstrained silicon nanowire array MOSFETs : fabrication and physical analysis

    Today, state of the art MOSFETs feature effective gate lengths of only a few tens of nanometers pushing the conventional MOSFET electronics towards nanoelectronics. The International Technology Roadmap for Semiconductors (ITRS) predicts the 18nm node for the year 2018, that requires a physical gate …

    aachen Repository record for Strained and unstrained silicon nanowire array MOSFETs : fabrication and physical analysis (opens in a new tab)

  4. Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications

    … is the ferroelectric Field Effect Transistor (FeFET), which is the object of study in this thesis. First, a short introduction to non-volatile memories is given. Then a comparison of the various alternatives is made which shows that the FeFET has a number of advantages compared to other …

    aachen Repository record for Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications (opens in a new tab)

  5. Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the …

    aachen Repository record for Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten (opens in a new tab)