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Showing 1 to 13 of 13 for “"MOS capacitor"”.
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Thin Oxide MOS Capacitor Studies of Fast Surface States
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-07-07T20:53:31Z No. of bitstreams: 1 1971_hunter.pdf: 3687418 bytes, checksum: 4c2047e94e889148dd27584ccd2621a8 (MD5)
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Studies of trap generation in silicon-dioxide and electromigration in aluminum thin films
… injection. A comparison between a 9%-HCl-oxide MOS capacitor and a dry-oxide MOS capacitor shows that HCl decreases the hydrogenation rate of the boron acceptor in the silicon surface layer and increases the density of the peaked interface trap at 0.3 eV above the silicon midgap. A new …
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Influence of SiNx/Si interface states on Si solar cells
… were observed for metal/SiN:H/n^+-Si MOS capacitor when it was subjected to a constant voltage stress (CVS) of +10V at room temperature. The interface trap density (D_{it}) across the SiN:H/n^+-Si interface increased from 6.3 x 10^9 to 7.5 x 10^9 cm^{-2} eV^{-1} after a 500-second …
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Detecting DNA Using Silicon Nanopores and 20--40 Nm Gate-Length RFNMOSFET
Lastly, we describe using a nanopore in a MOS-capacitor membrane to sense the charge in DNA. As DNA translocates the nanopore, the electrostatic charge distribution should polarize the capacitor and induce a voltage on the electrodes, which will be measured by our nanotransistors implemented right …
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Advanced silicon photonic modulators
… at speeds up to 13 GHz with a V"L of 1.2 Vcm. MOS capacitor modulator designs are investigated as an alternative, but are not found to offer significant advantages. Modulators are also designed for fabrication in an actual CMOS process -a crucial step in the quest for low-cost integration with …
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Quantitative capacitance measurements using a scanning probe microscope
… the capacitance of metal-oxide-semiconductor (MOS) structures. The capability to deduce sample capacitances is based on resonant frequency shifting, which relies on the SCM's ultra-precise capacitance sensor. The technique, however, is distinct from scanning capacitance microscopy imaging, with …
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Metal-assisted chemical etching of β-gallium oxide
… the surface due to high-energy ions, while most wet etching techniques can only produce very limited aspect ratios. In this thesis, β-Ga2O3 fin arrays by inverse metal-assisted chemical etching (MacEtch), under UV light irradiation, with a high aspect ratio and excellent surface quality, are …
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An Exploration of Entropy Sources in Standard CMOS for Cryptographic Applications
… by utilising a metal oxide semiconductor (MOS) capacitor structure, realised by grounding the drain and source of a MOS transistor. The thin oxide layer between the gate-bulk and the gate-drain, and gate-source presents a potential barrier that provides ideal tunnelling conditions. Devices …
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Effective mobility in silicon surface channels as measured with the MOS transistor
… effective mobility theory to silicon and to the MOS transistor, and b) extension of the existing effective mobility theory by the removal of various simplifying assumptions. Mobility measurements were confined primarily to inversion p-channel MOS transistors, although some built-in-channel and …
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Fundamental limits of the switching abruptness of tunneling transistors
… field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling does not …
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Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
… Field Effect Transistor (MOSFET) based devices. The motivation for employing high mobility channel materials is to reduce power dissipation in integrated circuits while also providing improved performance. One of the primary challenges to date in the field of III-V …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
… dielectric quality of metal oxide semiconductor (MOS) gate stack structures are critical to future CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have attracted increasing in replacing Si substrate to …
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Silicon-based pH sensor for biological and environmental applications
In biological and environmental applications, it is desirable to be able to measure hydrogen and hydroxyl ion concentrations (pH levels). Conventionally, the measurement processes take a considerable amount of time involving several calibration steps and handling of fragile electrodes. Here we …