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Showing 1 to 5 of 5 for “"MODFET"”.

  1. Quasi-Two-Dimensional Phenomena at Aluminum-Gallium - Arsenide - Gallium-Arsenide Heterointerfaces: Multiple Quantum Wells and Modulation-Doped Structures (Superlattice, Modfet, Semiconductors)

    This thesis describes a subset of phenomena at AlGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section, two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator …

    uiuc Repository record for Quasi-Two-Dimensional Phenomena at Aluminum-Gallium - Arsenide - Gallium-Arsenide Heterointerfaces: Multiple Quantum Wells and Modulation-Doped Structures (Superlattice, Modfet, Semiconductors) (opens in a new tab)

  2. A Study on the Nature of Anomalous Current Conduction in Gallium Nitride

    … surface features, while CAFM spectroscopy on a MODFET structure indicates a correlation between extended defects and field conduction behavior at room temperature. A remedy for poor conduction characteristics is presented in molten KOH etching, as evidenced by CAFM measurements, Schottky diodes, …

    vcu Repository record for A Study on the Nature of Anomalous Current Conduction in Gallium Nitride (opens in a new tab)

  3. GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates

    … of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.

    vcu Repository record for GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates (opens in a new tab)

  4. Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor

    … modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, …

    uiuc Repository record for Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor (opens in a new tab)

  5. Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures

    … and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.

    uiuc Repository record for Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures (opens in a new tab)