Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 4 of 4 for “"MOCVD-Verfahren"”.
-
Metallorganische Chemische Gasphasenabscheidung (MOCVD) ferroelektrischer Dünnschichten : Herstellung und Charakterisierung
… by metal organic chemical vapour deposition (MOCVD). A process has been developed to deposit single-phase PZT based perovskite films with varying barium content, both in polycrystalline form on iridium covered silicon substrates and hetero-epitaxially on strontium ruthenate covered strontium …
-
MOVPE growth and characterization of Cr-doped GaN
In this thesis chromium (Cr) incorporation during GaN growth by metal organic vapor phase epitaxy (MOVPE) was studied for the first time with the intention of producing a dilute magnetic semiconductor (DMS) with room temperature ferromagnetism. To this end the following growth parameters were …
-
MOVPE growth and characterization of Al Kappa Ga 1 - Kappa N/GaN heterostructures for HEMT application
In this thesis the MOVPE growth of AlN, GaN and AlGaN/GaN heterostructures on sapphire substrates was investigated with respect to HEMT application. The prerequisites for excellent HEMT devices were defined with respect to their structural properties: the HEMT structure should consist of a highly …
-
New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transistors (HEMTs) have attracted much research interest. However, group III-nitride growth related issues – predominantly the high defect densities due to lacking lattice matched substrates – limit the …