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Showing 1 to 20 of 38 for “"MBE growth"”.
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MBE growth and STM study of chalcogenide thin films
… In the first main chapter, we explore the growth of a monolayer of tin diselenide on highly oriented graphite. It exhibits a gap in the density of states, and we walk through the process of testing whether this is a superconducting gap. We show that monolayer tin diselenide is not a …
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MBE growth and investigation of (001) GaAs surfaces using SIMS
An MBE system has been designed and constructed. After identification and elimination of various problems, high mobility, Si-doped , n-tYfe GaAs has been grown with electron concentration from ~ 5 x 10[to the power of]15 cm[to the power of]-3 (u 77 ~ 30,000 cm[squared]/Vs) to a solubility limit at …
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A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors
… processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are: …
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Theoretical study of MBE growth of indium gallium arsenide semiconductor compound on gallium arsenide substrate
… an experiment with the same conditions. Growth modeling investigates compound semiconductor characteristics during the MBE growth which can achieve the best results to control the quality of growth. Growth modeling also is less expensive and faster than experiments. The wide variation in …
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Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures
… incorporation of Mn as a p-dopant in GaAs during MBE growth has been demonstrated to result in a low carrier concentration and a ripple-structure surface morphology most likely due to Mn segregation on the GaAs surface or a reaction with the GaAs substrate.
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2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures
The MBE growth of high-quality GaAs/AlGaAs epilayer structures has enabled the study of novel physical phenomena, such as the Quantum Hall and Fractional Quantum Hall in a 2D electron system (2DES), 1D transport, and single-electron transport in 0D systems. The wide range of systems that can be …
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Self-Assembled Barium Titanate Nanoscale Films by Molecular Beam Epitaxy
… has been controlling the stoichiometry during growth. Historically, the growth of barium titanate (BaTiO3) by molecular beam epitaxy has relied on a growth technique called shuttered RHEED. Shuttered RHEED controls the stoichiometry of barium titanate through the precise deposition of …
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Preparation and characterization of in situ deposited metal-insulator-III-V semiconductor devices
In this thesis, the growth, fabrication, and characterization of in-situ deposited III-V semiconductor-based Metal-Insulator-Semiconductor (MIS) devices are described. The two III-V semiconductors investigated were $\rm In\sb{0.53}Ga\sb{0.47}As$ and GaAs. The problems related to air exposure of the …
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Surface Diffusion Kinetics on Amorphous Silicon
… determined by analyzing our own series of HSG growth experiments using chemical vapor deposition. The results of this study are compared to HSG growth data obtained from MBE growth at temperatures below 590°C. The parameters for intrinsic diffusion for both studies are reasonably close. …
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Growth and magnetoelastic behavior of b-axis-oriented dysprosium
… (clamping). The present research describes a new MBE growth procedure to grow single crystal thin films and superlattices of rare earths with the hcp (llOO) b-axis normal to the growth plane. To explore the role of strain, clamping and symmetry-breaking in modifying the magnetic ordering …
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High-quality InP on GaAs
… attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, more expensive, and utilize older fabrication equipment than GaAs. High-quality InP on GaAs may also serve as a step towards bringing high-quality InP onto the Si platform. …
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In Situ Surface Studies of III-V Semiconductor Compounds
… methods and the Molecular Beam Epitaxy (MBE) growth technique allowed a flexible and diverse approach to growth front exploration. The first hybrid, limited the applicability of STM to in vacuo operation whereby the sample is rapidly cooled or “quenched” in an attempt to preserve the …
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Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy
… in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of …
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Surface ordering of MBE grown 001 gallium(05) aluminum(05) arsenic: A theoretical study
The surface kinetics of MBE growth of 001 {dollar}Ga\sb{x}Al\sb{1-x}As{dollar} is studied theoretically using the stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are adsorption and surface migration. …
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Studies of InAs and GaAs layers prepared by molecular beam epitaxy
This thesis describes a study of the growth and doping of single crystal thin films of GaAs and InAs by the technique of molecular beam epitaxy (MBE). One micron thick unintentionally doped films of InAs were deposited onto GaAs substrates at the relatively low growth temperature of 370°C and GaAs …
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III-V compound semiconductor selective area epitaxy on silicon substrates
… on chip. Selective area epitaxy is an MOCVD/MBE growth method that deposits high quality epitaxial materials on selected substrate surface areas. The selectivity is achieved by using SiO2 or Si3N4 as a growth mask, so that epitaxial growth only happens on exposed substrate surface. The …
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The application of low dose SIMS to surface studies on compound semiconductors
… monitor cleaning of GaAs substrates in UHV for MBE growth and adsorption studies - and the use of SIMS in studying low coverage oxygen adsorption on MBE grown (111)PbTe and (100)GaAs surfaces. As a monitoring technique for surface preparation, SIMS shows the presence of oxygen on (100)GaAs at …
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Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication
… processes by which InN nanostructures form in MBE growth. A phase diagram depicting the various growth modes was created by varying the In/N flux ratio and growth temperature. A transition from a 2D to a 3D growth mode can be realized by lowering both the flux ratio (changing to an N rich …
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Growth of titanium-nitride thin films for low-loss superconducting quantum circuits
This is a study of the growth of titanium-nitride (TiN) by plasma assisted molecular beam epitaxy (MBE) for applications in low loss quantum circuits. Titanium nitride is a material known to have low loss at microwave frequencies which sees practical use in many emerging quantum device …
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Synthesis and Properties of GaAs1-xBix Prepared by Molecular Beam Epitaxy
… of its synthesis using molecular beam epitaxy (MBE) and, as a result, improve its key as-grown properties that are of great importance to device applications, such as increasing Bi concentration in the alloy and enhancing its optical emission efficiency.</p><p>In chapter 3, the discovery of a …
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