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Showing 1 to 1 of 1 for “"Lower power design"”.
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Non-Volatile Memory Adaptation in Asynchronous Microcontroller for Low Leakage Power and Fast Turn-on Time
… (RAM) to achieve low leakage power and fast turn-on. This asynchronous non-volatile RAM is designed with a Spin-Transfer Torque (STT) memory device model and CMOS transistors in a 65 nm technology. A self-timed Quasi-Delay-Insensitive 1 KB STT RAM is designed with an MTNCL …