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Showing 1 to 1 of 1 for “"Low Energy Implantation"”.
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Low energy implantation of boron with decaborane ions
… of a novel approach to forming ultra shallow p-type junctions (tens of nm.) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B_{10}H_{14})vapor. Each B atom carries only ~9% of the …