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Showing 1 to 4 of 4 for “"Line Width Roughness"”.

  1. Novel resist materials for next generation lithography

    … in order to optimise sensitivity, resolution, line width roughness and etch resistance is presented. Sensitivity of sub 10 C/cm2 at 20 keV, half pitch resolution of 20 nm, a minimum sparse feature linewidth of 12 nm, line width roughness of sub 5 nm, and high etch resistance comparable with a …

    birmingham Repository record for Novel resist materials for next generation lithography (opens in a new tab)

  2. Investigation into obstacles to the implementation of the directed-self assembly of block copolymers

    … production of adequate BCP materials, high line edge roughness (LER) and line width roughness (LWR), and high defect densities. This work explores possible reasons for high LER, LWR, and defects using coarse-grained molecular dynamics and expands the library of BCP materials by synthesizing …

    gatech Repository record for Investigation into obstacles to the implementation of the directed-self assembly of block copolymers (opens in a new tab)

  3. Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam

    … sizes continue to decrease, the phenomena of line edge roughness (LER) becomes more disruptive in chip manufacturing. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to continue shrinking chip features economically. This …

    uiuc Repository record for Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam (opens in a new tab)