Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 16 of 16 for “"Line Edge Roughness"”.
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Origin, evolution, and control of sidewall line edge roughness transfer during plasma etching
… surface topography can be an important source of roughness and striation formation on sidewalls.
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Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam
… sizes continue to decrease, the phenomena of line edge roughness (LER) becomes more disruptive in chip manufacturing. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to continue shrinking chip features economically. This …
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Statistical Modeling of the Effects of Process Variations on Silicon Photonics
… building blocks. We examine the effect of line edge roughness as a random process variation on different components including Y-branches and coupled resonator optical waveguides. For the Y-branch, we use ensemble simulations to develop behavioral statistical models that can predict the …
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Investigation into obstacles to the implementation of the directed-self assembly of block copolymers
… production of adequate BCP materials, high line edge roughness (LER) and line width roughness (LWR), and high defect densities. This work explores possible reasons for high LER, LWR, and defects using coarse-grained molecular dynamics and expands the library of BCP materials by synthesizing …
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Statistical modeling and simulation of variability and reliability of CMOS technology
… Fluctuation, Mean Gate Length Deviation, and Line Edge Roughness. Because of their possible correlation with time dependent aging effects, the quantification of reliability has become more complex than ever. To that effect, we propose a framework to analyze the stochastic nature of different …
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Compressively strained Ge trigate p-MOSFETs
… likely associated with increased sidewall line edge roughness scattering in narrow lines.
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3-dimensional modeling and simulation of surface and sidewall roughening during plasma etching
Line edge roughness (LER) on the sidewalls of gate electrodes in metal oxide semiconductor transistors is one of the most important issues in the manufacturing of modem integrated circuits (IC). The significance of LER increases tremendously as desired features miniaturize because the dimensions of …
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TCAD approaches to multidimensional simulation of advanced semiconductor devices
… to two increasingly critical phenomena, namely line-edge roughness (LER) and random dopant fluctuations (RD). The impact of such phenomena on FinFET devices, which represent a promising alternative to planar CMOS technology, is estimated through 2D and 3D TCAD simulations and statistical tools, …
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Evolving Variability Tolerant Logic
… particular that of random dopant placement and line-edge roughness, is discuss. A system is developed which uses a genetic algorithm to attempt to optimise the dimensions of transistors within standard-cell libraries, with the aim of improving performance and reducing the impact of intrinsic …
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Mesoscale simulation of the photoresist process and hydrogel biosensor array platform indexed by shape
… and diagnose molecular-scale effects such as line edge roughness (LER) that are becoming significant problems. To address these issues, a first-principles “mesoscale” photoresist simulator was devised by past researchers, and further developed by the author. A base quencher model was added to …
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Novel advancements in nanofabrication for photonic crystal applications
… must be patterned in high-index and crystalline material such as silicon over large areas (mm² to cm²) with reasonable throughput. These patterns also must be placed coherently over the entire area, and contain controlled defects. No single conventional nanoscale patterning technique is able …
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Centrifuge-aided Micromolding and Sintering of Micron- and Submicron-sized Ceramic Features
… under air and argon atmospheres. Ridge size, line edge roughness, and grain size were characterized. Quantitative calculation of sintering behaviors was performed in order to obtain fundamental understating of the micron-sized ZnO feature sintering. It is found that oxygen partial pressure is …
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Adjoint Methods and Inverse Modeling for Process Variation Analysis in Silicon Photonics
… using the example of a Y-branch with line edge roughness variation. We also present a case study that builds a compact generative model using sensitivity analysis results, which can be used in circuit-level variation analysis. These wavelength dependent extensions and compact model …
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Electron beam lithography of molecular glass resist films prepared by physical vapor deposition
… dose gradient in a write field with only 100 µm edge length, as well as for the investigation of the resolution capability of novel resists. The second chapter focuses on the investigation of physical vapor deposition as alternative film preparation technique in lithography. In the curse of this …
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Synthesis and Combinatorial Optimization of Novel Star-Shaped Resist Materials for Lithographic Applications
… for Semiconductors (ITRS). The ITRS lists guidelines for cost-effective progresses in performance of integrated circuits, e.g. design of integrated circuits, advancements of exposure tools and exposure techniques, and closely correlated resist materials. This thesis deals with the development of …