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Showing 1 to 4 of 4 for “"Light-Emitting Transistors"”.

  1. Fabrication and characterization of resonant cavity light-emitting transistors

    … enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission …

    uiuc Repository record for Fabrication and characterization of resonant cavity light-emitting transistors (opens in a new tab)

  2. Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers

    … has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years. In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and layout design. In a light-emitting

    uiuc Repository record for Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers (opens in a new tab)

  3. Molecular Beam Epitaxy of Gallium Arsenide Antimonide-Based Ultra-High-Speed Double Heterojunction Bipolar Transistors and Light Emitting Transistors

    … work, GaAsSb-based double heterojunction bipolar transistors (DHBTs) and light emitting transistors (LETs) are grown using gas source molecular beam epitaxy (GSMBE). High-speed GaAs0.5Sb0.5/InP DHBTs are developed through the exercise of GSMBE growth optimization, device fabrication, and …

    uiuc Repository record for Molecular Beam Epitaxy of Gallium Arsenide Antimonide-Based Ultra-High-Speed Double Heterojunction Bipolar Transistors and Light Emitting Transistors (opens in a new tab)