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Showing 1 to 20 of 54 for “"Leakage currents"”.

  1. Subthreshold leakage control techniques for low power digital circuits

    … in future technologies will cause subthreshold leakage currents to become an increasingly large component of total power dissipation. As a result, new techniques are needed in order to provide high performance and low power circuit operation. This dissertation develops new circuit techniques …

    mit Repository record for Subthreshold leakage control techniques for low power digital circuits (opens in a new tab)

  2. Chemically modified Ta₂O₅ thin films for dynamic random access memory (DRAM) applications

    … in dielectric constant is offset by higher leakage currents compared to conventional dielectrics. Improvement in both, dielectric and insulating properties is required for the successful integration of Ta₂O₅ thin films into devices. In the current research work, it was demonstrated that by …

    vt Repository record for Chemically modified Ta₂O₅ thin films for dynamic random access memory (DRAM) applications (opens in a new tab)

  3. Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications

    … quality rectifying behaviour with extremely low leakage currents even on highly doped Ge. A non-Arrhenius behaviour of the temperature dependence is observed for the grown Ni/Ge diodes on lowly doped Ge that is explained by a spatial variation of the barrier heights. The inhomogeneity of the …

    soton Repository record for Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications (opens in a new tab)

  4. Charge Transfer at Thin-Film Modified Solid -Liquid Interfaces in the Absence of Redox-Active Moieties

    "The characterization of the flux of electrons (""leakage"" currents) crossing the electrified monolayer modified solid-liquid interface in the absence of redox active moieties in the electrolyte is the first step in the development of such a label free methodology. An analytical method is …

    uiuc Repository record for Charge Transfer at Thin-Film Modified Solid -Liquid Interfaces in the Absence of Redox-Active Moieties (opens in a new tab)

  5. Leakage conductance of concentric-neutral direct-burial underground primary cable

    A study was made of the leakage conductance to earth of the neutral of direct-burial concentric-neutral underground primary cable. This study was suggested in conjunction with a paper by Mr. D, L. Stone of the Rural Electrification Administration, "Reduced Concentric Neutral Primary Cable for …

    vt Repository record for Leakage conductance of concentric-neutral direct-burial underground primary cable (opens in a new tab)

  6. High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors for RF Applications

    … voltage coefficients of capacitance (VCCs) and leakage currents. To address these conflicting requirements, MIM capacitors using stacked dielectrics of a high-k dielectric on SiO2 were proposed. The MIM capacitors comprising thin film SiO<sub>2</sub> formed by atomic layer deposition (ALD) at …

    nus Repository record for High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors for RF Applications (opens in a new tab)

  7. High Voltage Bias Testing And Degradation Analysis Of Photovoltaic Modules

    … was collected on a daily basis and analyzed. The leakage currents for some chosen time period were calculated and compared with the measured values. Current-voltage characteristic measurements were carried out to check any reduction in the power. Samples were cored and extracted for analysis from …

    ucf

  8. Micro-scale processing of diamond structures and devices

    … imperative. However, it was found that the gate leakage currents of the diamond MISFET devices were quite large due to leakage through the diamond intrinsic layer under the gate. To overcome this problem, diamond MOSFET devices employing Si0₂ as gate insulation material were developed, which were …

    strathclyde Repository record for Micro-scale processing of diamond structures and devices (opens in a new tab)

  9. Laboratory investigation of insulator contamination problems

    … site. In addition, a system is described whereby leakage currents from contaminated insulators can be measured and recorded. Typical results obtained are given as examples of system application.

    cape-town Repository record for Laboratory investigation of insulator contamination problems (opens in a new tab)

  10. High performance zero-crossing based pipelined analog-to-digtal converters

    … down, as have the power supply voltages, and leakage currents have increased. These changes in the technology have made analog design more difficult. More specifically, the design of a high gain op-amp, a fundamental analog building block, has become more difficult in scaled processes. In this …

    mit Repository record for High performance zero-crossing based pipelined analog-to-digtal converters (opens in a new tab)

  11. Entwurf und Modellierung von Multikanal-CMOS-Farbsensoren

    … substantial disadvantages, such as increased leakage currents. Special circuit designs have been developed to especially reduce the influence of leakage currents. For application of the color correction method, new multi-channel photo sensors using vertically stacked photo diodes have been …

    qucosa-diss

  12. pinMOS Memory

    … Before the device can perform as desired, the leakage current due to the lateral charge up of the doped layers outside the active area needs to be suppressed. Therefore, in this thesis, lateral charging effects in organic light-emitting diodes (OLEDs) are studied first. By comparing the results …

    qucosa-diss

  13. Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications

    … increased Schottky barrier height and reduced leakage currents. This work provides a promising way to optimize the performance of β-Ga2O3-based devices for power electronics.

    rice Repository record for Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications (opens in a new tab)

  14. Cobalt silicide characterization

    … better heat cycle immunity, and good junction leakage characteristics; Key factors to be considered for a silicide process are: junction leakage currents, film uniformity, junction spiking, void formation, sheet resistivity, thermal stability, and agglomeration. There are four process variables …

    unlv Repository record for Cobalt silicide characterization (opens in a new tab)

  15. Development of BJT radiation sensors and read-out systems for Radon detection

    … Fabricated detectors observed high gain, low leakage currents and good detection properties. In parallel to the development of the detector, we successfully designed and implemented FPGA-based readout electronics ALPHADET. Design of the board and results of electrical tests of the board along …

    trento Repository record for Development of BJT radiation sensors and read-out systems for Radon detection (opens in a new tab)

  16. Optimal digital system design in deep submicron technology

    … with small increases in logic complexity, leakage energy waste still remains as a major design challenge. We find that fine-grain dynamic leakage reduction (FG-DLR), turning off small subblocks for short idle intervals, is the key for successful leakage energy saving. We introduce an FG-DLR …

    mit Repository record for Optimal digital system design in deep submicron technology (opens in a new tab)

  17. Leakage gate current in a heterostructure field effect transistor

    A theoretical formulation for the leakage gate current in a heterostructure insulated-gate field effect transistor (HIGFET) is presented. Three important components of the leakage gate current, namely 2-D tunneling, 3-D tunneling and thermionic emission current, are considered. The conduction band …

    unlv Repository record for Leakage gate current in a heterostructure field effect transistor (opens in a new tab)

  18. A MEMS-based precision operational amplifier

    … low-frequency noise of the amplifier and the leakage current of the amplifier input stage. This thesis presents a novel fully integrated operational amplifier design that addresses both measurement limitations by using a fully differential mechanical transductor input stage, fabricated using …

    mit Repository record for A MEMS-based precision operational amplifier (opens in a new tab)

  19. Charge transfer at thin-film modified solid-liquid interfaces in the absence of redox-active moieties

    … The characterization of the flux of electrons (“leakagecurrents) crossing the electrified monolayer modified solid-liquid interface in the absence of redox active moieties in the electrolyte is the first step in the development of such a label free methodology. An analytical method is presented …

    uiuc Repository record for Charge transfer at thin-film modified solid-liquid interfaces in the absence of redox-active moieties (opens in a new tab)

  20. Exploring water-in-oil emulsions for immersion cooling: thermophysical properties, electrical insulation, and chip-level performance

    … measurements, and high-voltage DC leakage tests up to 550 V, followed by chip-level immersion-cooling experiments on an Infineon MOSFET module. For water contents up to 10 vol%, leakage currents remain within the range of commercial dielectric fluids, whereas 20 vol% causes a sharp …

    uiuc Repository record for Exploring water-in-oil emulsions for immersion cooling: thermophysical properties, electrical insulation, and chip-level performance (opens in a new tab)

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