Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 6 of 6 for “"Lateral spin-valves"”.
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Size Effects on Transport in Graphene
… studies the size effects on the electron and spin transport properties of graphene: two of the fundamental aspects of graphene-based electronic devices. Two types of devices: graphene field-effect transistors and graphene lateral spin-valves were manufactured by top-down nanofabrication. With …
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Energy efficient hybrid computing systems using spin devices
<p>Emerging spin-devices like magnetic tunnel junctions (MTJ's), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The …
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Investigations of Crossed Andreev Reflection in Hybrid Superconductor-Ferromagnet Structures
… device geometries. The first devices studied are lateral spin valves. In these structures, when electrons with energies less than the superconducting energy gap are injected from one ferromagnetic wire into the superconductor, nonlocal transport processes involving the second ferromagnetic wire …
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Spin pumping measurements at interfaces between magnetic metal or insulator and organic semiconductors
Over the last 16 years, organic spintronics has developed into a striving field with exciting reports of extremely long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are a strong alternative to inorganic materials for use …
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Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures
We present studies of the electical detection of spin injection and transport in InSb/CoFe heterostructures. As a narrow gap semiconductor, InSb has a high mobility and strong spin-orbit interaction. Using ferromagnetic CoFe, lateral InSb/CoFe devices are fabricated by semiconductor processing …
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Spin and Charge Transport in Metallic Ferrimagnets and Disordered Magnetic Oxides
… disordered magnetic oxides for applications in spintronic devices. Due to the antiferromagnetic exchange interaction, ferrimagnetic materials offer the ultrafast dynamics of the antiferromagnetic exchange, with a net magnetization that can be influenced externally. With two, or more, competing …