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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 27 for “"Laser Annealing"”.
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Laser Annealing of Ion Implanted Silicon
… silicon annealed with a Q-switched Nd:glass laser ((lamda)= 1.06 (mu)m). In the theoretical calculations we have used the technique of finite difference equations to solve the one-dimensional heat conduction equations for the solid and liquid phases. We have taken into account the temperature …
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Pulsed laser annealing and characterization of GaAs substrates
Call number: LD2668 .T4 EECE 1989 S55
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Pulsed laser annealing and characterization of GaAs substrates
Call number: LD2668 .T4 EECE 1989 S55
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Scanned pulsed laser annealing of Cu thin films
… the grains could influence reliability. Scanned laser annealing can, in principle, be used to develop test structures with extremely large grains which could be used to quantify the effects of grain boundary scattering and the role of crystallographic orientation in interfacial electromigration. …
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Laser Annealing and Dopant Activation in III-V Materials
… materials. Using sub-millisecond to millisecond laser spike annealing (LSA), we can transiently reach high annealing temperatures, and, in this way, improve conductivity by achieving high active concentrations of dopants in these materials. We have broadly characterized LSA for III-V and III-N …
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Metodi avanzati di Laser Annealing, dai materiali complessi al trasporto su nanoscala
… fondamentale prevedere come l'interazione con i laser laser modificherà i materiali e le strutture nelle applicazioni nanoelettroniche e nella produzione di dispositivi. La mancanza di simulatori di Laser Annealing (LA) accurati e completi (compresa la calibrazione del materiale) negli strumenti …
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The formation of epitaxially stabilized nickel and cobalt silicides by pulsed laser annealing
… stabilised nickel and cobalt silicides by pulsed laser annealing has been investigated. Thermally grown NiSi and CoSi and Si<111> substrate were irradiated with laser pulses in the energy density range between 0.4 - 1.0 J/cm² in an attempt to produce epitaxially stabilized silicides. The analysis …
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Material deposition and laser annealing of metal oxide thin films for electronics fabricated at low temperature
… the samples were subjected to post-depositing annealing in air at ambient temperature utilising the advantages of excimer laser annealing (ELA) with a pulsed krypton fluoride (KrF) excimer laser at different laser fluences and number of pulses. The electrical, structural, compositional, and …
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Characterisation and optimisation of alternating current thin film electroluminescent displays
… lifetime and aging. Post deposition localised laser annealing as an alternative to thermal annealing has been previously described in the literature. The effects of laser annealing on various devices is investigated and described within this Thesis. In particular, the novel use of ArF laser …
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Laser induced epitaxy of Ni and Co silicides
Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides gave low (~5%) minimum yields for Co and Ni on <111> substrates1 as well as Ni on <100> …
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High-K MOSFETS with high mobility channels
… part demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than …
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Annealing studies of detector materials for uncooled thermal imaging
… scene. In addition to the work on PST, excimer laser annealing of low-temperature deposited PZT has been investigated for use in a fully integrated detector fabrication process. Modelling has shown that the PZT could be heated preferentially to induce perovskite formation whilst the ROIC could …
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Scalable Fabrication of High Efficiency Hybrid Perovskite Solar Cells by Electrospray
… 5, preliminary results are provided on the laser annealing of hybrid perovskite films to further advance their scalable manufacturing. All layers of HPSCs require thermal annealing at temperature over 150 C for about half an hour or longer. The time-consuming conventional thermal annealing …
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Evolution of Arsenic nanometric distributions in Silicon under advanced ion implantation and annealing processes
… and the second activation approach is a sub-melt laser annealing at different temperatures. A range of deactivation studies was performed using these two classes of material with more attention given to the laser annealed ones. Plasma ion immersion implantation together with the LA was considered …
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Rapidly-Deployable Materials Processing Approaches for Energy Applications and Chemical Separations
… capacity. Furthermore, I investigate laser annealing with a CO₂ laser cutter as a means to modify membrane materials to make them conductive for electrochemical applications such as redox-flow batteries and dye degradation. Finally, the thesis concludes with an outlook for future work, …
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Growth of Semiconductor Thin Films by Pulsed Laser Deposition
Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide and tin dioxide on (111) p-type silicon wafers within a versatile high vacuum laser deposition system. This pulsed laser deposition system was self-designed and self-built. Parameters such as pressure, …
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Metalizzazione su superfici di SiC: Contatti ohmici di Nisu 4H-SiC tramite processi laser
… è finalizzato allo studio del processo di Laser Annealing (LA) per la formazione di contatti ohmici. Questo metodo rappresenta infatti una valida soluzione per ottenere il contatto ohmico tramite silicidazione e con un limitato trasferimento di calore. Inoltre, il suo utilizzo nella …
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Dynamics of Melt-mediated Crystallization of Amorphous Silicon Films
… conclusions that were made regarding the pulsed-laser-induced melting-and-solidification behavior of a-Si films. In particular, it focuses on investigating the melt-mediated crystallization details that are associated with the a-Si films, which presumably do not contain preexisting microcrystal …
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Growth Study and Characterization of TiO2 Based Thin Films for Low Temperature Synthesis of Transparent Conductive Films
… TiO2 target for the films growth. Thermal and laser annealing processes were carried out for the films crystallization and doping. The structural analysis by x-ray diffraction (XRD) revealed a poor control over the anatase phase (mixed anatase and rutile phase formation) when the substrate was …
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