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Showing 1 to 5 of 5 for “"Large Area Device"”.

  1. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

    The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and …

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  2. Large area electro-optical tactile sensor:Characterization and design of a polymer, nanoparticle based tunneling device

    … increases. The spatial resolution of current large-area tactile sensors (greater than 1 cm2) lag human fingers by over an order of magnitude. Using metal and semiconducting nanoparticles, a ~100 nm thick, large area thin-film device working on the principles of electron tunneling is …

    vt Repository record for Large area electro-optical tactile sensor:Characterization and design of a polymer, nanoparticle based tunneling device (opens in a new tab)

  3. Advanced Semiconductor Device and Topology for High Power Current Source Converter

    … and development of an innovative semiconductor device and topology for the high power current source converter (CSC). The CSC is very attractive in high power applications due to its lower output dv/dt, easy regeneration capability and implicit short-circuit protection. Traditionally, either a …

    vt Repository record for Advanced Semiconductor Device and Topology for High Power Current Source Converter (opens in a new tab)

  4. Investigation of MOS-Gated Thyristors and Power Diodes

    … thyristors (MGT) refer to the class of power devices that combine the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. The MOS-controlled thyristor (MCT) is a typical MGT device. A comprehensive investigation of the …

    vt Repository record for Investigation of MOS-Gated Thyristors and Power Diodes (opens in a new tab)

  5. Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes

    … with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier concentration. Another benefit is the high critical electric …

    vt Repository record for Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes (opens in a new tab)