Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 5 of 5 for “"LT-GaAs"”.
-
Optoelektroniniai terahercinio dažnių diapazono komponentai iš puslaidininkių su giliais centrais /
… from the optically induced THz absorption of LTG GaAs layers grown on AlAs/GaAs Bragg mirror and annealed at moderate temperature. It was shown that electron lifetime in these layers is less than 1 ps. Induced THz absorption increased linearly with increasing laser pulse intensity. The maximum …
-
Terahertz optoelectronics components of semiconductor materials with deep defects /
… from the optically induced THz absorption of LTG GaAs layers grown on AlAs/GaAs Bragg mirror and annealed at moderate temperature. It was shown that electron lifetime in these layers is less than 1 ps. Induced THz absorption increased linearly with increasing laser pulse intensity. The maximum …
-
Preparation and optimization of low-temperature grown GaAs photomixers
… design and prepare photomixer devices based on LT GaAs and to optimize them with respect to the maximal output power. Essential part of the photomixer is the MSM photodetector structure. For this reason a major part of the optimization process was done on photodetector structures. One set of our …
-
Mode-locked surface emitting semiconductor lasers
… to steady state is introduced. TIme model results are broadly consistent with observed behavior of our diode-locked VECSELs.<br/>Here, I also report the first coherent generation and detection of terahertz radiation using all-semiconductor components. Radiation with a bandwidth of 0.8 THz has …
-
Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C
Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below …