Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 4 of 4 for “"LT-GaAs"”.
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Optoelektroniniai terahercinio dažnių diapazono komponentai iš puslaidininkių su giliais centrais /
… from the optically induced THz absorption of LTG GaAs layers grown on AlAs/GaAs Bragg mirror and annealed at moderate temperature. It was shown that electron lifetime in these layers is less than 1 ps. Induced THz absorption increased linearly with increasing laser pulse intensity. The maximum …
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Terahertz optoelectronics components of semiconductor materials with deep defects /
… from the optically induced THz absorption of LTG GaAs layers grown on AlAs/GaAs Bragg mirror and annealed at moderate temperature. It was shown that electron lifetime in these layers is less than 1 ps. Induced THz absorption increased linearly with increasing laser pulse intensity. The maximum …
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Mode-locked surface emitting semiconductor lasers
… to steady state is introduced. TIme model results are broadly consistent with observed behavior of our diode-locked VECSELs.<br/>Here, I also report the first coherent generation and detection of terahertz radiation using all-semiconductor components. Radiation with a bandwidth of 0.8 THz has …
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Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C
Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below …