Global ETD Search
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Showing 1 to 6 of 6 for “"Junctionless"”.
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NANOSCALE EFFECTS IN JUNCTIONLESS FIELD EFFECT TRANSISTORS
Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using …
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A study of silicon and germanium junctionless transistors
… the properties and feasibility of the proposed Junctionless transistor (JNT) have been evaluated for both Silicon and Germanium channels. The performance of Silicon JNTs with 22 nm gate length have been characterized at elevated temperature and stressed conditions. Furthermore, steep …
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Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs
… the development of planar inversion-mode and junctionless Al2O3/In0.53Ga0.47As metal-oxidesemiconductor field-effect transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated inversion-mode devices …
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FABRICATION AND CHARACTERIZATION OF ACTIVE NANOSTRUCTURES
… been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. …
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Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques
… RIE etching, for 3D fin channel formation. InP junctionless FinFETs with record high-aspect-ratio (~ 50:1) fins are demonstrated by this method for the first time. The i-MacEtch process flow eliminates dry-etching-induced plasma damage, high energy ion implantation damage, and high temperature …
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Electrical detection of atmospheric pollutants and detergents on silicon
… (NO2), and silicon surfaces on ambipolar silicon junctionless nanowire transistors (Si-JNTs) (Chapter 2). Experimental work and density functional theory (DFT) modelling demonstrate that NO2 functions as a "pseudo" molecular dopant, influencing key device parameters across p-type and n-type …