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Showing 1 to 5 of 5 for “"Johnson noise"”.

  1. Probing Symmetry and Disorder Effects in the Fractional Quantum Hall States of the Second Landau Level

    … current amplifier which is capable of performing Johnson noise limited measurements in the fractional quantum Hall regime. An impedance matching transformer is placed at the input of a commercially available dc SQUID ammeter. This circuit exhibits an extremely low amplifier noise of 2.3fA/√Hz. We …

    purdue-thes Repository record for Probing Symmetry and Disorder Effects in the Fractional Quantum Hall States of the Second Landau Level (opens in a new tab)

  2. Technologies for Room-Temperature Mid-Infrared Photodetection using Graphene

    … and architectures with resilience to thermal noise and infrared-transparent optical materials with minimal vibrational absorption, restricting the mid-infrared material toolbox. 2D materials, which promise to combine high crystallinity with inexpensive and low-temperature processing paradigms, …

    mit Repository record for Technologies for Room-Temperature Mid-Infrared Photodetection using Graphene (opens in a new tab)

  3. Communication-Theoretic Foundations for Optical Receivers Using Dynamically Biased Avalanche Photodiodes

    … photogenerated current to dominate the thermal noise without the need for optical pre-amplification of the received optical signal. However, the long avalanche buildup time associated with APDs, namely the time needed for all the impact ionizations to settle, has limited their speed and stopped …

    unm Repository record for Communication-Theoretic Foundations for Optical Receivers Using Dynamically Biased Avalanche Photodiodes (opens in a new tab)

  4. Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy

    … voltage of 32V at room temperature. A record Johnson-noise-limited detectivity of 9.0 × [10]^10 cm Hz^(1/2)/W was achieved at 290K. The 50% cutoff wavelength of the device was 2.57 µm. Thus, our result has clearly demonstrated the potential of very high-performance lattice-matched InGaAsSb …

    columbia-diss Repository record for Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy (opens in a new tab)