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Showing 1 to 16 of 16 for “"JFET"”.
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A SiC JFET-Based Three-Phase AC PWM Buck Rectifier
… power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of …
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Designing Framework For The Computer Aided Design Of Silicon Carbide JFET Circuits In BLEO Environments
… such as venus or mars. However, 6h-sic jfets, which are basic logic gate integrated circuits, have significantly potential for persistent operation in these environmental conditions. On the basis of the temperature effects of 6h-sic jfet's compared to conventional cmos jfet's, we choose …
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III-V compound semiconductor integrated charge storage structures for dynamic and non-volatile memory elements.
… types use the junction field effect transistor (JFET) for charge sensing, with each having different bipolar or epitaxial layer structure controlling the junction gate. The bottom epitaxial layer in each case served as the JFET channel. Two of the device types have three alternately doped layers, …
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Theory of Superjunction Devices
… the parasitic junction field effect transistor (JFET) presented in the superjunction. Fujihira’s model assumes the limit of the minimum cell pitch, by saying that the specific resistance can be decreased indefinitely with decreasing the cell pitch. In 2018, the first universal model for the …
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Open-Gate Junction Field-Effect Transistor for Chemical and Biomolecular Analysis
… open-gate junction field-effect transistor (OG-JFET) by CMC Microsystem represents a significant advancement in silicon-foundry-based FET sensor technology standardization. The OG-JFET foundry enables the mass production of chips with diverse designs on a silicon wafer, allowing for customized …
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Physical Modeling of Silicon Carbide Power Junction Field Effect Transistor and Model Levels For Semiconductor Devices
… 1200V/20A SiC junction field effect transistor (JFET) is at the verge of being commercialized by various companies, including SemiSouth Laboratories, Inc. The fabrication of other devices, like high voltage SiC MOSFET, is progressing. Providing circuit simulator models for these revolutionary …
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Robustness of Gallium Nitride Power Devices
… junction field effect transistor (Fin-JFET), a promising pre-commercialized GaN power device with the p-n junction embedded between the gate and drain which enables the avalanche breakdown. The robustness study on GaN JFET follows similar test approaches as Si metal-oxide-semiconductor …
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An analog and digital data acquisition system for Non-Intrusive Load Monitoring
… breaker box. The current sensor uses discrete JFET devices to passively transmit data inductively through the steel door of the circuit breaker.
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High power wide bandgap cascode switching circuits
… carbide (SiC) junction field-effect transistor JFET and SiC MOSFET. The on-state resistance penalty of the cascode configuration is shown to be modest and potentially mitigated by careful selection of HV transistor gate bias. There are few advantages to using silicon SJ MOSFETs in a cascode …
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Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices
… two SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A SiC MOSFET by CREE, have been investigated systematically in this thesis. The static and switching characteristics of the two switches have firstly been characterized to get the basic device information. …
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A retrot current sensor for non-intrusive power monitoring at the circuit breaker
… steel breaker panel door. A passive, balanced JFET mixer circuit transmits the sensed current signal through the inductive link by impedance modulation. Outside of the breaker panel door, sense circuitry detects the impedance modulation, and a digitally implemented compensator inverts the …
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The Development and Packaging of a High-Density, Three-Phase, Silicon Carbide (SiC) Motor Drive
… SOI bare die control components with SiC power JFET bare die into a single compact module are presented in this work. The high-temperature operation of SiC switches allows for increased power density over silicon electronics by an order of magnitude, leading to highly miniaturized power …
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Electrical Integration of SiC Power Devices for High-Power-Density Applications
… on a high-temperature rectifier module with SiC JFET. A modified structure is then proposed to further improve design flexibility and simplify module fabrication. The SiC MOSFET phase-leg module built in this structure successfully reaches the switching speed limit of the device almost without …
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High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors
… BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General Electric, Fairchild Semiconductor, GeneSiC …
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MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES
With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W/cm∙ K at room temperature) of any material, high hole mobility (>2000 cm2/V∙s), high critical electric field (>10 MV/cm), and large bandgap (5.47 eV), Diamond has overwhelming advantages over …