Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 152 for “"Ion implantation"”.
-
Ion Implantation Damage in Semiconductors
The diffuse X-ray scattering from defects in ion implanted Si was studied at implantation temperatures ranging from 100 K to 300 K, and the results were compared to simulations of the scattering intensity from realistic defects in Si. In situ studies of keV implants identified close Frenkel pair …
-
Ion Implantation Damage in Solids
Ion induced surface smoothing and roughening processes were studied using Molecular Dynamics (MD) computer simulation. The simulations on self-ion bombarded W showed the effect of the surface on defect production and the roughening of the surface. The simulations on the CuTi, Ag and Ni with …
-
Ion Implantation Synthesis of Silicon Carbide
… on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 …
-
Studies of High-Dose Ion Implantation in Silicon
Made available in DSpace on 2014-12-12T20:54:56Z (GMT). No. of bitstreams: 1 7913642.pdf: 4891402 bytes, checksum: e9e93f6d940a2d47f86519e79b8ab921 (MD5) Previous issue date: 1978
-
Fabrication of electroluminescent silicon diodes by plasma ion implantation
This thesis describes the fabrication and testing of electroluminescent diodes made from silicon subjected to plasma ion implantation. A silicon-compatible, electrically driven light source is desired to increase the speed and efficiency of short-range data transfer in the communications and …
-
Photsluminescence of ZnO: Radioactive ion-implantation and transition metal defects
In this thesis, implantation of radioactive isotopes and photoluminescence studies were used to identify defects in ZnO. Implantations of stable and radioactive isotopes of gallium and zinc were performed. From photoluminescence studies of these samples, a feature at 3.3600 eV was shown to be due …
-
Ultra Low Power SubThreshold Device Design Using New Ion Implantation Profile
… like DIBL, short channel effect, threshold variation etc. These effects are always become a serious issue whenever circuit operates at higher supply voltage. Subthreshold circuit operates at lower supply voltage and these kind of effects will not be a serious issue. Since subthreshold circuit will …
-
RF-compensated Langmuir Probe Diagnostics of Pulsed Plasma Ion Implantation System
… on the development of a method for prediction of ion implantation dose in processing plasmas. The vital variable is fluence, i.e. ion implantation dose, which is currently predicted by Lieberman model during high-voltage Plasma Ion Implantation (PII). Chapter \ref{chap:intro} starts with an …
-
Ion Implantation and Characterization of High Temperature and High Performance Polymers
… sources or custom made, are modified by ion implantation technology. Over ten different ions from ⁴He to ¹³⁷Xe with a wide range of energies of 50 keV to 42 MeV have been implanted with a dose range of 10¹³ to 10¹⁷ ions/cm². Surface electrical conductivities of these originally insulating …
-
Use of Ion Implantation in the Construction of an Uncooled Microbolometer
… The bridge material is made conductive through implantation of 1x10¹⁶ N⁺ ions/cm². The use of ion implanted polymers in building the IR sensor allows several advantages over the use of more conventional materials. The implanted polymers are very resistant to corrosive materials, and therefore do …
-
On the synthesis of metastable A-15 "Nb3Si" by ion implantation.
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1978
-
Analysis of corrosion fatigue for commercially pure titanium using nitrogen ion implantation
… of this research is to determine the corrosion fatigue behaviours for commercially pure titanium (CpTi) using nitrogen ion implantation. A series of studies was conducted to obtain the mechanical properties, corrosion resistance and fatigue and corrosion fatigue behaviours and to develop …
-
Ion implantation for figure correction of high-resolution x-ray telescope mirrors
Fabricating mirrors for future high-resolution, large-aperture x-ray telescopes continues to challenge the x-ray astronomy instrumentation community. Building a large-aperture telescope requires thin, lightweight mirrors; due to the very low stiffness of thin mirrors, these are difficult to …
-
Modeling of high fluence Ti ion implantation and vacuum carburization in steel
Concentration-versus-depth profiles have been calculated for Ti and C in Ti-implanted 52100 steel. A computer formalism was developed to account for diffusion and mixing processes, as well as sputtering and lattice dilation. A Gaussian distribution of Ti was assumed to be incorporated at each time …
-
Preparation and Characterization of Magnetic Nanocomposite in a Polymer Matrix By Ion Implantation
… properties that have many potential applications. Ion implantation is a versatile technique that can create nanocomposite materials with a wide range of interesting electronic and magnetic properties. The scope of the research is to induce ferromagnetic metals into a polymer matrix and …
-
Changes in the near-surface stress in titanium caused by krypton ion-implantation
In this work, the effect of krypton implantation on the morphology of titanium samples is investigated through scanning electron microscopy (SEM). Rutherford backscattering spectrometry (RBS) was also used to determine the dose and depth of implanted krypton. The krypton profiile in titanium, and …
-
Qualification of a medium current ion implantation system in a semiconductor production environment
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
-
The Effect of Ion Implantation on the Corrosive-Wear Resistance of Ti-6A1-4V.
The human body will react to the introduction of any foreign material. The extent of this reaction depends not only on thematerial itself but on its size, shape and reaction products. Many surgical implant devices are subjected to wear and fretting processes which generate wear debris and corrosion …
Page 1 of 8