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Showing 1 to 2 of 2 for “"Inversion Domain Boundaries"”.
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Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors
… between voids, threading dislocations, inversion domain boundaries and their associated V-defects and the variation in MQW growth rate has been discussed in detail.
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INTERFACES IN NOVEL ELECTRONIC MATERIALS
North Carolina State University Theses Materials Science and Engineering.