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Showing 1 to 15 of 15 for “"Intraband"”.

  1. Physics of intraband quantum dot optoelectronic devices

    … has been obtained with quantum well based intraband devices, such as quantum cascade lasers and quantum well infrared photodetectors. However due to longer carrier lifetimes in quantum dots, it is expected that optoelectronic devices based on intraband transitions in self-assembled quantum …

    whiterose Repository record for Physics of intraband quantum dot optoelectronic devices (opens in a new tab)

  2. Terahertz driven intraband dynamics of excitons in nanorods

    Quantum dots and nanorods are becoming increasingly important structures due to their potential applications that range from photovoltaic devices to medicine. The majority of the research on carrier dynamics in these structures has been in the optical regime, with little work performed at Terahertz …

    queens Repository record for Terahertz driven intraband dynamics of excitons in nanorods (opens in a new tab)

  3. Interband and intraband optical studies of CdSe colloidal nanocrystal films

    … more electrons are available to undergo the intraband transition and absorb more light in infrared region. However, the opposite effect is observed. The energy and cross section of the infrared absorption are consistent with a one-electron transition between the 1S[e] and 1P[e] states …

    mit Repository record for Interband and intraband optical studies of CdSe colloidal nanocrystal films (opens in a new tab)

  4. Energetics and Dynamics in Quantum Confined Semiconductor Nanostructures

    … to be of primary consequence, namely, electronic intraband relaxation, coupling to surface-mediated processes, and tunneling to the external environment. The relative dominance of these paths will vary from sample to sample. More importantly, within a sample, the contributions of the available …

    wustl Repository record for Energetics and Dynamics in Quantum Confined Semiconductor Nanostructures (opens in a new tab)

  5. Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb

    … (ii) Advancements were made in the theory of intraband absorption and scattering processes. (iii) Experiments were carried out on the spin-flip Raman laser to examine crystal anisotropy. An important feature of this research is the prediction and observation of a striking magnetic field …

    mit Repository record for Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb (opens in a new tab)

  6. Coherent optical nonlinearities in semiconductor microstructures

    … is the quantum nature of light, which induces intraband polarizations in the presence of a coherent driving field and a finite carrier density. It is found that the coupling of the intraband polarizations via guided modes to the polarization of the fundamental longitudinal mode is responsible …

    arizona-thes Repository record for Coherent optical nonlinearities in semiconductor microstructures (opens in a new tab)

  7. Ultrafast exciton relaxation in quasi-one-dimensional perylene derivatives

    … in k-space. Lower and upper limits of the intraband relaxation time constants are 25fs (resolution limit) and 250fs (100fs) for PTCDA (MePTCDI). These values agree with the upper limit for the intraband relaxation time of 10ps, evaluated from time-resolved luminescence measurements. While …

    qucosa-diss

  8. Electronic properties of bilayer graphene in a steady magnetic field

    … Boltzmann transport equation, we determine the intraband contribution to the dc current, known as the magnetic ratchet effect, and the second harmonic current. We also take into account a perpendicular magnetic field component, which produces cyclotron motion and cyclotron resonance. We discuss …

    lancaster Repository record for Electronic properties of bilayer graphene in a steady magnetic field (opens in a new tab)

  9. COHERENCE AND FREQUENCY STABILITY OF SEMICONDUCTOR LASERS UNDER CW OPERA TI ON AND MODULATION

    … the model developed here enables the electronic intraband relaxation scattering to be developed beyond the well-known relaxation time approximation which is normally used in similar analyses. The results of spectral hole burning arising from long scattering times with corresponding detrimental …

    nus Repository record for COHERENCE AND FREQUENCY STABILITY OF SEMICONDUCTOR LASERS UNDER CW OPERA TI ON AND MODULATION (opens in a new tab)

  10. Processing-composition-structure effects on the optical band gap of KNbO3-based ceramics

    … reaction may lead to the occurrence of intraband states, which can be misinterpreted. Similar conclusions are reached for 0.98 K0.5Na0.5NbO3-0.02BaNb0.5Ni0.5O3.

    sheffield-hallam Repository record for Processing-composition-structure effects on the optical band gap of KNbO3-based ceramics (opens in a new tab)

  11. Nanoscale light-matter interaction of ultrathin materials

    … crystals of metal nanoparticles, whose confined intraband dynamics support localized surface‐plasmon resonances and spectrally sharp, spatially extended lattice modes. 2. Landau‐quantized 2D electron gases in GaAs quantum wells under a few tesla perpendicular magnetic fields where the …

    tu-berlin Repository record for Nanoscale light-matter interaction of ultrathin materials (opens in a new tab)

  12. The impact of surface modifications on the properties of α-SnWO4 photoanodes for photoelectrochemical water splitting

    … und Photoelektronenspektroskopie, dass Intraband-Zustände existieren. Es wird vorgeschlagen, dass diese Zustände für die beobachteten Photospannungsverluste verantwortlich sind. Für die praktische Erzeugung von Wasserstoff ist die (photo)elektrochemische Stabilität eine entscheidende …

    tu-berlin Repository record for The impact of surface modifications on the properties of α-SnWO4 photoanodes for photoelectrochemical water splitting (opens in a new tab)

  13. Electronic and optical properties of InAs nanocrystals

    … and quantitatively. The results relative to intraband (valence-to-valence and conduction-to-conduction) absorption successfully reproduce the recently measured photoinduced absorption spectra, which had so far been addressed only qualitatively. They exclude the hypothesis of a thermal …

    whiterose Repository record for Electronic and optical properties of InAs nanocrystals (opens in a new tab)

  14. Optical studies of highly-doped GaAs:C

    … from 0.07 to 0.6 eV, in which region plasmon (intraband) and intervalenceband contributions are in competition. Our results for the optical absorption coefficient resolve two separate peaks located (at high doping) at about 0.1 and 0.2 eV. (The effective-plasmon model necessarily missed the …

    vt Repository record for Optical studies of highly-doped GaAs:C (opens in a new tab)