Global ETD Search

Full chip modeling for predictive simulation of charged device model electrostatic discharge events

Shukla, Vrashank G.University of Illinois at Urbana-Champaign2010

… Power domain crossing circuits, also known as internal I/Os, are susceptible to gate oxide damage during CDM events. In this thesis, circuit-level simulations of internal I/O circuits are used to elucidate the roles of the package, power clamp placement, anti-parallel diode placement and …

uiuc Repository record for Full chip modeling for predictive simulation of charged device model electrostatic discharge events (opens in a new tab)