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Showing 1 to 2 of 2 for “"Interface property"”.
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Electrical characterizations of lithium niobate thin films in a metal-ferroelectric-semiconductor capacitor
… in controlling the ferroelectric semiconductor interface property. The switching transient current curve from a dual polarity four pulses chain study (P-S) gives the switching time of the sample about 80--100ns. Current vs. voltage (I--V) curve is explained with a back-to-back Schottky barrier …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
The oxide/substrate interface quality and the dielectric quality of metal oxide semiconductor (MOS) gate stack structures are critical to future CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have …