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Showing 1 to 5 of 5 for “"Interface passivation"”.
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Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon
One of the major defects that contribute to the interface states in the silicon band gap is the dangling bond, which degrades performance of MOS devices. Passivation of these bonds with hydrogen had been found to diminish their effect but the improvement degrades the operation due to hot electron …
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Advancing inorganic perovskite solar cells for application in tandem architectures
… transport layer (CTL), the contribution of each interface to the voltage loss could be quantified. This allowed for a targeted improvement of the limiting interface. For p-i-n CsPbI2Br perovskite solar cells, a lithium fluoride interlayer between the perovskite and the CTL C60 improved the energy …
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Investigation of Group V doping and passivating oxides to reduce the voltage deficit in CdTe solar cells
… the explorations of using Al2O¬3 as a passivation layer, pairing it with highly doped amorphous silicon as a hole contact, resulting in excess-carrier lifetimes up to 8 µs, the highest reported to date for polycrystalline Cd(Se)Te. Although the inclusion of arsenic doping and an …
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Chemical Modifications and Passivation Approaches in Metal Halide Perovskite Solar Cells
… unique chemical treatment in order to have clean interface with fast electron injection form the absorber layer in the perovskite solar cells. We then explored monovalent cation doping of lead halide perovskites using sodium, copper and silver with similar ionic radii to lead to enhance structural …
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GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing
In previous studies, device quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process; i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (~0.6 nm) and ii) remote plasma enhanced chemical vapor deposition (RPECVD) to deposit …