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Showing 1 to 2 of 2 for “"Interconnect Metallization"”.
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Chemical vapor deposition of thin films for ULSI interconnect metallization
… of copper chemical vapor deposition (CVD) for interconnect metallization using solution delivery of Cu(hfac)2 (Cu(II) hexafluoroacetyl-acetonate) dissolved in isopropanol. We observe a growth rate of 17.7 „b 1.5 nm/min at reference conditions of 300„aC substrate temperature, 0.025 Torr …
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Comparison of high power impulse magnetron sputtering and modulated pulsed power sputtering for interconnect metallization
… seed layers in the state of the art interlevel metallization process. As the critical dimension keeps shrinking, it has become increasingly difficult to use the current techniques to form thin, continuous and stable barrier/seed layers, and more likely to form void during the following process …