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Showing 1 to 14 of 14 for “"Insulated gate bipolar transistors"”.
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Behavioral analysis of insulated gate bipolar transistors during hard and soft turn-off
Open Restriction set for Item 112658 on 2019-11-07T19:24:03Z with date null by astein@illinois.edu.
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In situ power-loss estimation of IGBT modules
A fault detection and prediction method for insulated-gate bipolar transistors (IGBTs) has been improved over the past decades to reduce system downtime. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: the necessity to operate at high voltage in the …
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The parallel connection of single phase DC to AC power converters
… using a fast control circuit for each converter, insulated-gate bipolar transistors (IGBTs), a high switching frequency (10 kHz to 20 kHz), and a frequency modulated (FM) communication scheme. Thus, the modularity is enhanced by using an FM signal in order to eliminate the wiring normally required …
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A DSP based variable-speed induction motor drive for a revolving stage
… study, a three phase induction motor drive using Insulated Gate Bipolar Transistors (IGBT) at the inverter power stage is introduced to implement speed and position control for the revolving stage in the Frederic Wood Theatre This thesis presents a solution to control a 3-phase induction motor …
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PCB-Based 1.2 kV SiC MOSFET Packages for High Power Density Electric Vehicle On-Board Chargers
… electronics. Replacing the incumbent silicon insulated gate bipolar transistors with silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) has been proposed as a solution to increase the power densities of power converters in some applications. One such application …
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Novel MOS-gated bipolar device concepts towards a new generation of power semiconductor devices.
Research in MOS-gated power semiconductor devices with combined bipolarlVIOS action has been motivated by the continuous industrial need for highly efficient devices with reduced power losses and high impedance gate control. The Insulated Gate Bipolar Transistor (IGBT) and the IVIOS Controlled …
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Generalized Average-Current-Mode Control of Single-Phase AC-DC Boost Converters with Power Factor Correction
… and slow-switching power devices such as insulated-gate bipolar transistors (IGBTs) in boost PFC converters, including those designed for higher ac line frequencies such as in aircraft power systems (360–800 Hz). In bidirectional boost PFC converters, including multilevel topologies, the …
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Comprehensive loss optimization of induction motor drives
… in power semiconductor switching devices such as insulated gate bipolar transistors and gate commutated thyristors, induction motor drives are increasingly used in applications, ranging from automotive traction to more-electric aircraft, which have widely varying speed, torque and power …
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Methods for assessing the impact of silicon carbide traction inverters in electric vehicles
… (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), hold promise for increased efficiency and extended range. To ensure the safe and reliable operation of these systems, it is necessary to consider the current harmonics generated by the traction inverter and their distribution …
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Turn-Off Voltage Sharing of Field-Stop IGBTs in Series Connection under Inductive Load Conditions
Operating Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs) in series connection is attractive to many power electronic applications, including converters, hybrid circuit breakers, etc. To operate IGBTs in series connection, regulating the voltage sharing between the IGBTs during the IGBT …
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The study of the upgrade and improvement of power electronics protection system for locomotives
A dissertation submitted in fulfillment of the requirements for the Master of Engineering Degree in Electrical Power Engineering, Durban University of Technology, Durban, South Africa, 2023.
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Processing and Characterization of Device Solder Interconnection and Module Attachment for Power Electronics Modules
… by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si₃N₄ passivation, we had successfully fabricated packaged devices and modules using …
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Circuits and Modulation Schemes to Achieve High Power-Density in SiC Grid-connected Converters
… of SiC three-phase converters were investigated. Firstly, a magnetic integration method was introduced for the coupled inductors in the interleaved three-phase converters. Due to limited current-capacity compared to the silicon insulated-gate bipolar transistors (Si-IGBTs), discrete SiC …