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Showing 1 to 12 of 12 for “"Insulated Gate Bipolar Transistor (IGBT)"”.
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Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice. Based on the semiconductor physics, the model accurately predicts the nonlinear junction capacitance variations, recombinations, and …
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Inverter Dynamic Electro-Thermal Simulation with Experimental Verification
… are extracted over temperature for the insulated gate bipolar transistor (IGBT) and diode electro-thermal models. A thermal network methodology that includes thermal coupling between devices is applied to a six-pack module package containing multiple IGBT and diode chips. The …
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Experimentally validated multiscale thermal modeling of electronic cabinets
… illustrated through an electronic enclosure with insulated gate bipolar transistor (IGBT) module. The multiscale thermal modeling methodology presented here was validated through experiments conducted on a simulated electronic cabinet and the test vehicle with hybrid cooling technique. The latter …
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Novel MOS-gated bipolar device concepts towards a new generation of power semiconductor devices.
Research in MOS-gated power semiconductor devices with combined bipolarlVIOS action has been motivated by the continuous industrial need for highly efficient devices with reduced power losses and high impedance gate control. The Insulated Gate Bipolar Transistor (IGBT) and the IVIOS Controlled …
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A Low Temperature Co-fired Ceramic (LTCC) Interposer Based Three-Dimensional Stacked Wire Bondless Power Module
… power module consists of two 1200 V 25 A silicon insulated-gate bipolar transistor (IGBT) devices in parallel and two 1200 V 20 A Schottky barrier diodes (SBD) in an antiparallel configuration. A novel interconnection scheme with conductive clamps and a spring loaded LTCC interposer is introduced …
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
New Insulated Gate Bipolar Transistor (IGBT) designs are reliant on simulation tools, such as Sentaurus technology computer-aided design (TCAD) models, which allow for rapid device development that could not be achieved by manufacturing prototypes due to the cost and time associated with …
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DC-DC converter designs for medium and high voltage direct current systems
… across each semiconductor switch (for instance insulated gate bipolar transistor - IGBT) of the series switch arrays in the conventional two-level DAB design. With auxiliary active circuits, series connected IGBTs effectively become series connection of half-bridge submodules (cells) in each …
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High Bandwidth Rogowski Coils, Commutation Loop Stray Inductance, and the Si IGBT and the SiC MOSFET Based Hybrid Concept
… of the metal-oxide-semiconductor field-effect transistor (MOSFET) and the insulated-gate bipolar transistor (IGBT), deepening the reader’s understanding of these essential components in power electronics. It then focuses on the current commutation loop inductance, underscoring the importance of …
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Driver Based Soft Switch for Pulse-Width-Modulated Power Converters
… of a base driver circuit for current driven bipolar junction transistor (BJT). A new insulated-gate-bipolar-transistor (IGBT) and power metal-oxide-semiconductor field-effect-transistor (MOSFET) gated transistor (IMGT) base drive structure was initially proposed for a high power SiC BJT. The …
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Investigation of MOS-Gated Thyristors and Power Diodes
The MOS-gated thyristors (MGT) refer to the class of power devices that combine the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. The MOS-controlled thyristor (MCT) is a typical MGT device. A comprehensive …
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Die-Attachment on Copper by Nanosilver Sintering: Processing, Characterization and Reliability
… and steady-state thermal resistance (Rth) of insulated gate bipolar transistor (IGBT) packages. The coefficient of variation (CV) of Zth measurement by the system was lower than 0.5%. Lead-free solder (SAC305) was applied in comparison of thermal performance with nanosilver paste. With same …
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Turn-Off Voltage Sharing of Field-Stop IGBTs in Series Connection under Inductive Load Conditions
Operating Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs) in series connection is attractive to many power electronic applications, including converters, hybrid circuit breakers, etc. To operate IGBTs in series connection, regulating the voltage sharing between the IGBTs during the IGBT …