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Showing 1 to 20 of 39 for “"Infrared Photodetectors"”.
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Engineered quantum dots for infrared photodetectors
Quantum Dot Infrared Photodetector (QDIP) Focal Plane Arrays (FPAs) have been proposed as an alternative technology for the 3rd generation FPAs. QDIPs are emerging as a competitive technology for infrared detection and imaging especially in the midwave infrared (MWIR) and longwave infrared (LWIR) …
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Design of quantum well infrared photodetectors
QWIPs which respond to normally incident radiation without the need for an optical grating are of particular interest because they can be fabricated with fewer process steps and increased expected yield. An important contribution of this work is the demonstration of the first n-type QWIP (n-QWIP) …
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Novel structures for lattice-mismatched infrared photodetectors
… of nBn detector structures as lattice mismatched photodetectors. Using a design based on an InAsSb bulk-material absorber, a comparison was again drawn between two samples, one grown on mismatched GaAs and a second grown on native GaSb. This time, device dark current densities were found to be …
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Indium-Gallium-Arsenide Quantum Wire Infrared Photodetectors
Midinfrared (6.3 and 8.4 mum) InxGa 1-xAs/In0.52Al0.24Ga 0.24As quantum wire infrared photodetectors (QRIPs) grown on semi-insulating (001) on-axis InP substrates via solid-source molecular beam epitaxy (MBE) have been fabricated and characterized. The quantum wires (QWRs) were formed using an in …
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Material processing of quantum well infrared photodetectors
… (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP …
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Dopant Incorporation in InAs/GaAs Quantum Dot Infrared Photodetectors
<p>Quantum Dot Infrared Photodetectors (QDIPs) are important alternatives to conventional infrared photodetectors with high potential to provide required detector performance, such as higher temperature operation and multispectral response, due to the 3-D quantum confinement of electrons, discrete …
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Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak …
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Theory and experiments of type-II superlattice infrared photodetectors
… and a wide optical tunable range in the mid-infrared regime. Photodetectors based on type-II superlattices are theoretically predicted to surpass the performance of those based on the commercialized HgCdTe II-VI system. An electronic band structure model is formulated based on the 8-band k · …
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Multispectral plasmon enhanced quantum dots in a well infrared photodetectors
Infrared detectors in 3-5 μm and 8-12 μm regions are extensively used for applications in remote sensing, target detection and medical diagnostics. Detectors using intersubband transitions in the quantum dots in a well (DWELL) system for infrared detection have gained prominence recently, owing to …
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Heterostructure engineering of quantum dots-in-a-well infrared photodetectors
… and large format arrays. The quantum dot infrared photodetector technology, owing to the three-dimensional confinement of carriers, the richness of the electronic spectra in quantum dots, and the mature III-V based fabrication technology, satisfy these requirements. This work focuses on …
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Growth and optimization of quantum dots-in-a-well infrared photodetectors
Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long wavelength (3-14 μm) infrared detection due to their potential for normal incidence operation and low dark current. In our research group, we have been investigating infrared detectors based on …
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Characterization of, and novel architectures for, strained-layer superlattice infrared photodetectors
The current generation of infrared photodetectors, used in imaging and sensing applications, are predominantly made of an expensive II-VI material, HgCdTe (mercury cadmium telluride, MCT). A viable alternative class of materials, the III-V type-II superlattices (T2SLs), have been actively studied …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
Infrared photodetectors are essential in many industries and modern applications require devices with enhanced capabilities. High-performance detectors can be used for spectroscopy in medicine and environmental monitoring. Imaging scenarios include the identification of military targets and …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
Infrared photodetectors are essential in many industries and modern applications require devices with enhanced capabilities. High-performance detectors can be used for spectroscopy in medicine and environmental monitoring. Imaging scenarios include the identification of military targets and …
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Theory and Experiment of Antimony-Based Type-Ii Superlattice Infrared Photodetectors
… material system for the next generation of mid-infrared photodetector focal plane arrays (FPAs). In order to understand the underlying physics and to improve the device performance of this emerging technique, InAs/InGaSb superlattice photodetectors are studied theoretically and experimentally in …
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Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates
The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design …
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Resonant-cavity-enhanced multispectral infrared photodetectors for monolithic integration on silicon
Multispectral infrared (IR) detection has been widely employed for numerous applications including hyperspectral imaging, IR spectroscopy, and target identification. Traditional multispectral detection technology is based on the combination of broadband focal plane arrays (FPA) and spectral …
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Optical characterisation of quantum well infrared photodetectors (QWIPs) for gas sensing applications
… work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the distinctive feature of this project is the use of strain compensated materials on InP substrates, AIAs (tensile) and InGaAs (compressive), to achieve shorter wavelengths and higher temperature operation. Stepped …
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Growth and characterization of site-controlled InAs(Sb) nanowires for use in infrared photodetectors
… in the development of InAs(Sb) nanowires for infrared photonics due to their high tunability across the infrared spectral range and integration with silicon electronics applications. The use of nanowires in IR photonics also promises transformational advantages. Site-controlled catalyst free …
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