Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 15 of 15 for “"Indium Phosphide (InP)"”.
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Characterization of shallow impurities in high-purity gallium arsenide and indium phosphide using photothermal ionization spectroscopy: Nonequilibrium incorporation of amphoteric impurities
… in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the characterization techniques, Hall-effect measurements, photothermal ionization spectroscopy (PTIS), and photoluminescence (PL). These …
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Compact device modeling and millimeter-wave oscillator design for III-V HBT technology
… frequency synthesizer circuits implemented in an indium phosphide (InP) DHBT technology are designed, fabricated, and measured to show the ability of this technology to implement fully integrated sources with moderate power dissipation at millimeter-wave frequencies.
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Development of InP DHBT for 5G millimeter-wave power amplifier and GaAs photodetector for 50 Gb/s optical link
… power efficiency. As for wireless communication, Indium phosphide (InP) heterojunction bipolar transistors (HBTs) are widely deployed in high-speed mixed signaling and radio-frequency (RF) instruments because of their outstanding ability to amplify the signals at high-speed bandwidth. Moreover, …
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Indium phosphide based integrated photonic devices for telecommunications and sensing applications
… this thesis. These devices are fabricated in the indium phosphide (InP) material system, which includes InP and the ternary/quaternary III-V semiconductors that can be grown closely lattice-matched on the InP substrate. The all-optical logic gate is designed as a Mach-Zehnder interferometer with …
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Glass Based Packaging for Beyond 5G Communication
… integration solutions for 140 GHz CMOS IC and Indium Phosphide (InP) power amplifier (PA) RFFE modules, demonstrating the superior performance of the first D-band PA-antenna module using advanced die-embedded glass substrate. This work addresses the challenges of antenna integration, …
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Experimental and theoretical investigation of indium phosphide quantum dot growth mechanisms
Indium phosphide (InP) quantum dots (QDs) stand out as the most promising candidate to replace the currently commercialized cadmium-containing materials for optoelectronic applications. This thesis focuses on using experimental and theoretical methods to study growth mechanisms of InP QDs from …
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Growth and Characterisation studies of MgO and Mg silicate dielectric layers on Si and InP surfaces
… high-k dielectric materials on both silicon and indium phosphide (InP) surfaces. Given that the emphasis of this study was controlling the semiconductor/high-k interface formation, the principle experimental technique used in these studies was x-ray photoelectron spectroscopy (XPS), however, …
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Numerical Analysis and Optimal Design of Efficient Thin-Film Solar Cells with Novel Buffer Layers
… is required. Semiconducting materials like SiC, InP, InSb, GaAs, etc. have the properties to be used as buffer layer. For example Silicon Carbide (SiC) particularly in crystalline form deposited by atmospheric pressure chemical vapour deposition (APCVD) can match all those requirements and …
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Investigation of Narrowband Acousto-Optic Tunable Filters for Semiconductor Laser Tuning
… from a superluminescent diode with an Indium Phosphide (InP) active layer and produced >5 mW over 1650 – 1750 nm. This source was subsequently used for characterising a frequency shifting, quasi-collinear AOTF for its tuning relation, response to different driving conditions, and …
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Nanocrystal/J-aggregate constructs : chemistry, energy transfer, and applications
… light harvesting. In Chapter 5, the kinetics of indium phosphide (InP) semiconductor nanocrystal synthesis is discussed. InP is benficial for nanocrystal applications in biology or display technologies, as it does not contain lead or cadmium. However, the molecular mechanism of InP nanocrystal …
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Microchemical systems for the synthesis of nanostructures : quantum dots
… systematic investigation of the synthesis of indium phosphide (InP) QDs. We investigated synthesis of InP QDs with a continuous 3-stage high-temperature and high-pressure microreactor system without incorporating any batch manipulations between the synthesis steps. By separating the mixing …
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Polarization multiplexed photonic integrated circuits for 100 Gbit/s and beyond
… in the semiconducting material system of indium phosphide (InP) and its related quaternary alloys (InGaAsP). The technology used for fabrication is referred to as generic, meaning that it is not intended for fabrication of a specific device but rather to enable as many different …
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Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability
… to III-V semiconductors such as GaAs, GaN, and InP. This thesis demonstrates uniform array-based InP nanostructures with lateral dimensions as small as sub-20 nm using inverse metal-assisted chemical etching (I-MacEtch), a purely solution-based yet anisotropic etching method. The type and …
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High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications
… (CMOS) transistors. Among different HBTs, InP HBTs offer the highest frequency operation capability with reasonably high breakdown voltage. Thus, InP HBTs are becoming increasingly important for high-speed mixed-signal ICs. Depending on different heterojunction band alignments, there are …
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Integrated Inp Photonic Switches
… functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of …