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Showing 1 to 8 of 8 for “"Indium Nitride"”.
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Growth of Indium Nitride Quantum Dots by Molecular Beam Epitaxy
… ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by …
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Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication
… energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 …
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Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles
… average size of 6.2 nm. Based on this synthesis, indium-rich InGaN nanoparticles were synthesized and characterized. Chemical, structural, and optical analysis indicated up to 10% gallium incorporation before encountering the miscibility gap. Using CdSe nanoparticles as a model system, M13 …
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Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride
In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION …
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Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties
… of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although …
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Mechanisms of the Reactive Sputtering of Indium in Argon-Nitrogen and Nitrogen-Oxygen Discharges: Growth of Indium-Nitride, Indium-Oxynitride and Indium-Oxide Films
Made available in DSpace on 2014-12-14T16:00:42Z (GMT). No. of bitstreams: 1 8009116.pdf: 4068822 bytes, checksum: 396bc6d13f3353256bf717f4c6cf9bf5 (MD5) Previous issue date: 1979
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Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
Group III-nitrides semiconductors composed of gallium nitride (GaN), Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes …
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The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures
… smoother and delayed transitions indicative of indium diffusion and drift during common atomic deposition techniques (e.g. molecular beam epitaxy, chemical vapor deposition). In this case the InGaN square QW approximation may not be valid in modeling the devices' true electronic behavior. A …